G2N4403

CORPORATION G2N4403 Description Features P NP EP ITAXI AL P L ANAR TANSI STOR The G2N4403 is designed for general purpose switching and amplifier applications. ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B *Complementary to G2N4401 *High Power Dissipation: 625mW at 25 : *High DC Current Gain: 100-300 at 150mA *High Breakdown Voltage: 40V Min Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature Collector to Base Voltage C ollector to Emitter Voltage Emitter to Base Voltage C ollector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO Ratings +150 -55 ~ +150 -40 -40 -5 -600 625 Unit :‡ :‡ V V V mA mW IC PD Characteristics Symbol BVCBO BVCEO BVEBO ICEX *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT C ob at Ta = 25 : Min. -40 -40 -5 -750 30 60 100 100 20 200 Typ. Max. -100 -0.4 -750 -950 -1.3 300 8.5 MHz pF Unit V V V nA V mV mV V IC=-100uA IC=-1mA IE=-10uA VCE=-35V, V BE= -0.4V IC=-150mA, IB=-15mA IC=-500mA, IB=-15mA IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA VCE=-1V, IB=-0.1mA VCE=-1V, IC=-1mA VCE=-1V, IC=-10mA VCE=-2V, IC=-150mA VCE=-2V, IC=-500mA VCE=-10V, IC =-20mA, f=100MHz VCB=-10V, f=1MHz * Pulse Test: Pulse Width A 100-210 B 190-300 380us, Duty Cycle 2% Test Conditions Classification OF hFE4 R ank R ange G2N4403 Page: 1/2 CORPORATION Characteristics Curve ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 G2N4403 Page: 2/2