G2U9972

Pb Free Plating Product ISSUED DATE :2005/07/05 REVISED DATE : G2U9972 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 18m 60A The G2U9972 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-262 package is universally preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters. Description Features *Simple Drive Requirement *Lower Gate Charge Package Dimensions REF. A b c D E Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 REF. c2 b2 L e L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 1.27 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 : ID @TC=100 : IDM PD @TC=25 : IAR Tj, Tstg Ratings 60 f 25 60 38 230 89 0.7 30 -55 ~ +150 Unit V V A A A W W/ A Total Power Dissipation Linear Derating Factor Avalanche Current 2 Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 1.4 62 Unit /W /W G2U9972 Page: 1/4 ISSUED DATE :2005/07/05 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 60 1.0 Typ. 0.06 55 32 8 20 11 58 45 80 3170 280 230 1.7 Max. 3.0 D 100 10 25 18 22 51 5070 pF S nA Ł ns nC Unit V V/ : V S nA uA uA mŁ Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=35A 25V VGS= D VDS=60V, VGS=0 VDS=48V, VGS=0 VGS=10V, ID=35A VGS=4.5V, ID=25A ID=35A VDS=48V VGS=4.5V VDS=30V ID=35A VGS=10V RG=3.3 Ł RD=0.86 Ł VGS=0V VDS=25V f=1.0MHz f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=150 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance3 Total Gate Charge3 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time3 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg Source-Drain Diode Parameter Forward On Voltage 3 Symbol VSD Trr Qrr Min. - Typ. 50 48 Max. 1.2 - Unit V ns nC Test Conditions IS=35A, VGS=0V IS=35A, VGS=0V dI/dt=100A/ s Reverse Recovery Time Reverse Recovery Charge Notes: 1. Pulse width limited by Max. junction temperature. 2. Staring Tj=25 : , VDD=30V, L=1mH, RG=25 Ł , IAS=30A. 3. Pulse width 300us, duty cycle 2%. G2U9972 Page: 2/4 ISSUED DATE :2005/07/05 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode G2U9972 Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2005/07/05 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 G2U9972 Page: 4/4