GBAT54

G B AT 5 4 / A / C / S Description Silicon Schottky Barrier Double Diodes . 1/2 Package Dimensions REF. A B C D E F Min. 2.70 2.40 1.40 0.35 0 0.45 Millimeter Max. 3.10 2.80 1.60 0.50 0.10 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0C 10 C Style : Pin 1.Anode 2.Cathode 3.Common Connection Symbol Tj Tstg Ratings +125 -65 ~ +125 30 200 300 600 PD 230 V mA mA mA mW Unit Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature R epetitive Peak Reverse Voltage Forward Continuous Current R epetitive Peak Forward Current Surge Forward Current Total Power Dissipation at Ta = 25 : Characteristics characteristics at Ta = 25 : Symbol V(BR)R VF(1) VF(2) Min 30 Max. 240 320 400 500 1000 2.0 10 5 Unit V mV mV mV mV mV uA pF ns IR=10uA IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA VR=25V VR=1V, f=1MHz IF=IR=10mA, RL=100 Ł measured at IR=1mA Test Conditions R everse breakdown voltage Forward Voltage VF(3) VF(4) VF(5) IR CT Trr R everse Current Total Capacitance R everse Recover Time 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 FAX : 86-21-38950165