GBAV70

G B AV 7 0 Description The GBAV70 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is designed for high-speed switching application in hybrid thick and thin-film circuits. 1/3 Package Dimensions Style : Pin1.Anode 2. Anode 3. Cathode REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF . G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0C 10 C Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature R everse Voltage Forward Current R epetitive Forward Current Total Power Dissipation Symbol Tj Tstg Ratings +150 -65~+150 80 200 500 225 Unit PD V mA mA mW Characteristics Characteristic at Ta = 25 : Symbol V(BR) VF(1) VF(2) VF(3) VF(4) IR CT Trr Min. 80 Max. 715 855 1100 1300 5 1.5 15 Unit V mV mV mV mV uA pF nS IR=100uA IF=1mA IF=10mA IF=50mA IF=100mA VR=80V VR=0, f=1MHz IF=IR=10mA, RL=100 Ł measured at IR=1Ma,VR=5V Test Conditions R everse Breakdown Voltage Forward Voltage R everse Current Total Capacitance R everse Recovery Time 2/3 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 FAX : 86-21-38950165 3/3