GBAV99

1/2 G B AV 9 9 Description The GBAV99 consists of two diodes in a plastic surface mount package. The diodes are connected in series and the unit is designed for high-speed switching application in hybrid thick and thin-film circuits. Package Dimensions Style : Pin1.Anode 2.Cathode 3.Common Connection Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60 K 0.10 0.20 D 0.35 0.50 J 0.40 E 0 0.10 L 0.85 1.15 0C 10 C F 0.45 0.55 M Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature R everse Voltage R epetitive Reverse Voltage Forward Current R epetitive Forward Current Forward Surge Current(1ms) Total Power Dissipation Symbol Tj Tstg Ratings +150 -65~+150 70 70 150 500 1000 250 Unit PD V V mA mA mA mW Characteristics Characteristic at Ta = 25 : Symbol V(BR) VF(1) VF(2) VF(3) VF(4) IR CT Trr Min. 70 Max. 715 855 1000 1250 2.5 1.5 6 Unit V mV mV mV mV uA pF nS IR=100uA IF=1mA IF=10mA IF=50mA IF=150mA VR=70V VR=0, f=1MHz IF=IR=10mA, RL=100 Ł measured at IR=1mA Test Conditions R everse Breakdown Voltage Forward Voltage R everse Current Total Capacitance R everse Recovery Time 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 FAX : 86-21-38950165