GD511

ISSUED DATE :2004/11/30 REVISED DATE : G D 5 11 Description S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 8 5 V, C U R R E N T 0 . 1 A Package Dimensions The GD511 is designed for ultra high speed switching application, low forward voltage and fast reverse recovery time. REF. A A1 A2 D E HE Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70 REF. L b c Q1 Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18 0.15 BSC. Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature Maximum Peak Reverse Voltage Maximum Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current(10ms) Total Power Dissipation Symbol Tj Tstg VRM VR IFM IO IFSM PD Ratings +150 -55 ~ +150 85 80 300 100 2 150 V V mA mA A mW Unit Electrical Characteristics at Ta = 25 : Characteristic Forward Voltage R everse Current Total Capacitance R everse Recovery Time Symbol VF(1) VF(2) VF(3) IR CT Trr M in. Typ. 0.6 0.7 0.9 2.2 1.6 Max. 1.2 0.5 4.0 4.0 Unit V V V A pF nS IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1MHz IF=10mA Test Conditions 1/2 ISSUED DATE :2004/11/30 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2