GE09N70

Pb Free Plating Product ISSUED DATE :2005/04/21 REVISED DATE : GE09N70 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 600/650/700V RDS(ON) 0.75 ID 9A The GE09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits. *Dynamic dv/dt Rating *Simple Drive Requirement *Repetitive Avalanche Rated *Fast Switching Speed Description Features Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1 Symbol - /A/H VDS VGS ID @TC=25 : ID @TC=100 : IDM PD @TC=25 : 2 Ratings 600/650/700 f 20 9 5 40 156 1.25 305 9 9 -55 ~ +150 Unit V V A A A W W/ mJ A mJ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range EAS IAR EAR Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 0.8 62 Unit /W /W 1/5 ISSUED DATE :2005/04/21 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Unless otherwise specified) Min. 600 Typ. 0.6 4.5 44 11 12 19 21 56 24 2660 170 10 Max. 4.0 D 1 100 500 0.75 pF ns nC Unit V V V V/ : V S uA uA uA Test Conditions VGS=0, ID=250uA VGS=0, ID=250uA VGS=0, ID=250uA A H Symbol Drain-Source Breakdown Voltage BVDSS 650 700 Breakdown Voltage Temperature Coefficient BVDSS / Tj 2.0 - Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=50V, ID=4.5A VGS= D 20V VDS=600V, VGS=0 VDS=480V, VGS=0 VGS=10V, ID=4.5A ID=9A VDS=480V VGS=10V VDD=300V ID=9A VGS=10V RG=10 Ł RD=34 Ł VGS=0V VDS=25V f=1.0MHz Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=150 : ) VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Static Drain-Source On-Resistance Total Gate Charge 3 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Parameter Forward On Voltage3 Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Symbol VSD IS ISM Min. - Typ. - Max. 1.5 9 40 Unit V A A Test Conditions IS=9A, VGS=0V, Tj=25 : VD= VG=0V, VS=1.5V Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 : , VDD=50V, L=6.8mH, RG=25 Ł , IAS=9A. 3. Pulse width 300us, duty cycle 2%. 2/5 ISSUED DATE :2005/04/21 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature Fig 6. Type Power Dissipation 3/5 ISSUED DATE :2005/04/21 REVISED DATE : Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature 4/5 ISSUED DATE :2005/04/21 REVISED DATE : Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 5/5