GE13003

ISSUED DATE :2005/01/12 REVISED DATE : GE13003 Description NPN SILICON POWER TRANSISTOR The GE13003 is designed for high voltage, high speed power switching inductive circuit where fall time is critical. It is particularly suited for 115 and 220v Switch-mode. Features & Inductive Switching Matrix 0.5~1.5Amp, 25 and 100 : ` ` ` 1A, 100 : is 290ns(Typ) tc @ &700V Blocking Capability &SOA and Switching Application Information Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature C ollector to Emitter Voltage C ollector to Emitter Voltage Emitter to Base Voltage C ollector Current -Continuous -Peak(1) B ase Current -Continuous - Peak(1) Emitter Current -Continuous -Peak(1) Total Power Dissipation at Ta=25 : D erate above 25 : Total Power Dissipation at Tc=25 : D erate above 25 : Symbol Tj Tstg VCEO(sus) VCEO VEBO ICM IB IBM IE IEM PD PD IC Ratings +150 -55 ~ +150 400 700 9 1.5 3.0 0.75 1.5 2.25 4.5 1.4 11.2 40 320 V V V A A A W mW/ : W mW/ : Unit Thermal Characteristics Parameter Thermal Resistance, Junction-ambient Thermal Resistance, Junction-case Maximum Lead Temperature for Soldering Purposes:1/8” from Case for 5 Seconds (1)Pulse Test: Pulse Width=5ms, Duty Cycle 10% Symbol R R JA JC Value 89 3.12 275 Unit /W /W TL 1/4 ISSUED DATE :2005/01/12 REVISED DATE : Electrical Characteristics(Tc = 25 Parameter *Off Characteristics(1) C ollector-Emitter Sustaining Voltage C ollector Cutoff Current Emitter Cutoff Current *On Characteristics(1) VCE(sat)1 C ollector-Emitter Saturation Voltage VCE(sat)2 VCE(sat)3 VCE(sat)4 VBE(sat)1 B ase-Emitter Saturation Voltage VBE(sat)2 VBE(sat)3 DC Current Gain Current-Gain Bandwidth Product Output Capacitance *Switching Characteristics D elay Time Rise Time Storage Time Fall Time Storage Time Crossover Time Fall Time Td Tr Ts Tf Tsv Tc Tfi ¯ % HFE1 HFE2 fT Cob VCEO(sus) ICEV IEBO Unless otherwise specified) Min. 400 8 5 4 - Symbol Typ. 10 21 0.05 0.5 2 0.4 1.7 0.29 0.15 Max. 1 5 1 0.5 1.0 3.0 1.0 1.0 1.2 1.1 40 25 0.1 1 4 0.7 4 0.75 - Unit V mA mA Test Conditions IC=10mA , IB=0 VCEV=Rated Value, V BE(off)=1.5V VCEV=Rated Value, V BE(off)=1.5V, TC=100 : VEB=9V IC=500mA, IB=100mA V IC=1A, IB=250mA IC=1.5A, IB=500mA IC=1A, IB=250mA, TC=100 : IC=500mA, IB=100mA V IC=1A, IB=250mA IC=1A, IB=250mA, TC=100 : VCE=2V, IC=500mA VCE=2V, IC=1A MHz pF VCE=10V, IC =100mA, f=1MHz VCB=10V, IE=0, f=0.1MHz s VCC=125V, IC =1A, IB1=IB2=0.2A, Tp=25 s, Duty Cycle 1% s IC=1A, Vclamp=300V, IB1=0.2A, VBE(off)=5Vdc, TC=100 : (1)Pulse Test: Pulse Width=300 s, Duty Cycle Classification Of HFE1 Rank Range A 8~16 B 15~21 C 20~26 D 25~31 E 30~36 F 35~40 2/4 ISSUED DATE :2005/01/12 REVISED DATE : Characteristics Curve 3/4 ISSUED DATE :2005/01/12 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4