GE75NF60

Pb Free Plating Product ISSUED DATE :2006/12/01 REVISED DATE : GE75NF60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 12m 75A The GE75NF60 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. Description Features *High Density Cell Design for Ultra Low On-Resistance *High power and Current handing capability Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 : ID @TC=100 : IDM PD @TC=25 : 2 Ratings 60 ±25 75 56 200 268 1.78 350 38 -55 ~ +175 Unit V V A A A W W/ : mJ A : Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy EAS IAS Tj, Tstg Single Pulse Avalanche Current Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-case Rthj-amb Value 0.56 60 Unit : /W : /W GE75NF60 Page: 1/4 ISSUED DATE :2006/12/01 REVISED DATE : Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=55 : ) Symbol BVDSS VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Min. 60 2.0 - Typ. 34 114 33 18 21 39 70 24 7000 400 87 Max. 4.0 ±100 1 5 12 - Unit V V S nA uA uA m Test Conditions VGS=0, ID=250uA VDS=VGS, ID=250uA VDS=15V, ID=40A VGS= ±25V VDS=60, VGS=0 VDS=48V, VGS=0 VGS=10V, ID=37.5A ID=30A VDS=30V VGS=10V VDS=30V VGS=10V RG=3 RL=1 VGS=0V VDS=30V f=1.0MHz Static Drain-Source On-Resistance Total Gate Charge3 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 3 nC ns pF Source-Drain Diode Parameter Forward On Voltage 3 3 Symbol VSD Trr Qrr IS Min. - Typ. 53 143 - Max. 1.5 75 Unit V ns nC A Test Conditions IS=75A, VGS=0V, Tj=25 : IS=30A, VGS=0V dI/dt=100A/ s VD= VG=0V, VS=1.5V Reverse Recovery Time Reverse Recovery Charge Continuous Source Current (Body Diode) Notes: 1. Pulse width limited by safe operating area. 2. Starting Tj=25 : , VDD=20V, L=0.1mH, RG=25 , IAS=20A. 3. Pulse width 300us, duty cycle 2%. GE75NF60 Page: 2/4 ISSUED DATE :2006/12/01 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. On-Resistance v.s. Drain Current and Gate Voltage 100 10 Fig 4. On-Resistance v.s. Junction Temperature 1 0.1 0.01 0.001 0.0001 Fig 5. On-Resistance v.s. Gate-Source Voltage Fig 6. Body Diode Characteristics GE75NF60 Page: 3/4 ISSUED DATE :2006/12/01 REVISED DATE : Fig 7. Maximum Safe Operating Area Fig 8. Single Pulse Avalanche Capability Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 0.56 : /W Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Fig 11. Normalized Maximum Transient Thermal Impedance Curve GE75NF60 Page: 4/4