GE85T08

Pb Free Plating Product ISSUED DATE :2005/03/08 REVISED DATE : GE85T08 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 80V 13m 75A The GE85T08 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *Lower On-resistance *Fast Switching Description Features Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 : ID @TC=100 : IDM PD @TC=25 : 3 Ratings 80 f 20 75 48 260 138 1.11 450 30 -55 ~ +150 Unit V V A A A W W/ mJ A Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Operating Junction and Storage Temperature Range EAS IAR Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 0.9 62 Unit /W /W GE85T08 Page: 1/4 ISSUED DATE :2005/03/08 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 80 1.0 Typ. 0.09 70 63 23 38 30 100 144 173 6300 670 350 1.1 Max. 3.0 D 100 10 100 13 18 100 10080 1.7 Ł pF ns nC Unit V V/ : V S nA uA uA mŁ Test Conditions VGS=0, ID=1mA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=45A VGS= D 20V VDS=80V, VGS=0 VDS=64V, VGS=0 VGS=10V, ID=45A VGS=4.5V, ID=25A ID=45A VDS=64V VGS=4.5V VDS=40V ID=45A VGS=10V RG=10 Ł RD=0.89 Ł VGS=0V VDS=25V f=1.0MHz f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=150 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance Total Gate Charge 2 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Source-Drain Diode Parameter Forward On Voltage2 Reverse Recovery Time 2 Symbol VSD Trr Qrr Min. - Typ. 47 86 Max. 1.3 - Unit V ns nC Test Conditions IS=45A, VGS=0V IS=20A, VGS=0V dI/dt=100A/ s Reverse Recovery Charge Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. 3. Staring Tj=25 : , VDD=30V, L=1mH, RG=25 Ł , IAS=30A. GE85T08 Page: 2/4 ISSUED DATE :2005/03/08 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode GE85T08 Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2005/03/08 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GE85T08 Page: 4/4