GESD880

ISSUED DATE :2005/12/12 REVISED DATE : GESD880 Description NPN EPITAXIAL PLANAR TRANSISTOR The GESD880 is designed for audio frequency power amplifier application. Features & DC Current Gain: hFE = 300 (Max.) @ VCE = 5V, IC = 0.5A High & Low Saturation Voltage: VCE (sat) = 1.0V (Max.) @ IC = 3A, IB = 0.3A Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings (TA=25 : ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Power Dissipation (TA=25 : ) Collector Power Dissipation (TC=25 : ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD PD TJ Tstg Ratings 80 62 7 3 1.5 25 150 -55 ~ +150 Unit V V V A W W : : Electrical Characteristics (TA = 25 : unless otherwise noted) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *VBE(ON) *hFE fT Cob Min. 80 62 7 60 Typ. 8 40 Max. 10 10 1.0 1.5 1.0 300 MHz pF Unit V V V uA uA V V V IC=100uA, IE=0 IC=50mA, IB=0 IE=100uA, IC=0 VCB=80V, IE=0 VEB=7V, IC=0 IC=3A, IB=0.3A IC=2A, IB=0.2A VCE=5V, IC=500mA VCE=5V, IC=0.5A VCE=5V, IE=-0.5A VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions Classification Of hFE Rank Range O 60 ~ 120 Y 100 ~ 200 GR 150 ~ 300 GESD880 Page: 1/2 ISSUED DATE :2005/12/12 REVISED DATE : Characteristics Curve hFE - IC 1000 VCE(sat) - IC 1 Collector-Emitter Saturation Voltage VCE(sat) (V) VCE=5V IC/IB=10 DC Current Gain hFE 0.1 100 0.01 10 0.001 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 Collector Current IC ( A) Collector Current IC ( A) VBE(sat) - IC 10 IC - VBE(on) 10 Base-Emitter Saturation Voltage VBE(sat) (V) IC/IB=10 VCE=5V 1 Collector Current IC (A) 1 0.1 0.01 0.1 0.001 0.01 0.1 1 10 0.001 0.4 0.6 0.8 1 Collector Current IC ( A) Base-Emitter On Voltage VBE(on) (V) fT - IE 100 Cob - VCB 100 VCE=5V Collector Output Capacitance Cob (pF) f=1Mhz Transition Frequency fT (MHz) 10 1 0.001 0.01 0.1 1 10 0.1 1 10 100 Emitter Current IE ( A) Collector-Base Voltage VCB (V) Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GESD880 Page: 2/2