GI1386

ISSUED DATE :2005/07/25 REVISED DATE : GI1386 Description PNP EPITAXIAL SILICON TRANSISTOR The GI1386 is designed for low frequency applications. Features & VCE(sat) =-0.55V(Typ.) (IC/IB=-4A/-0.1A) Low Package Dimensions &Excellent DC current gain characteristics TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current *Collector Current (Pulse) Total Power Dissipation (TC=25 : ) Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 -30 -20 -6 -5 -10 20 Unit V V V A A W Electrical Characteristics (Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -30 -20 -6 82 Typ. 120 60 ) Max. -500 -500 -1 580 Unit V V V nA nA V MHz pF Test Conditions IC=-50uA , IE=0 IC=-1mA, IB=0 IE=-50uA ,IC=0 VCB=-20V, IE=0 VEB=-5V, IC=0 IC=-4A, IB=-0.1A VCE=-2V, IC=-0.5A VCE=-6V, IE=50mA, f=30MHz VCB=-20V, IE=0, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Classification Of hFE Rank Range P 82 - 180 Q 120 - 270 R 180 - 390 E 370 - 580 GI1386 Page: 1/2 ISSUED DATE :2005/07/25 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GI1386 Page: 2/2