GI3669

ISSUED DATE :2005/08/31 REVISED DATE :2005/11/28B GI3669 Description Package Dimensions NPN EPITAXIAL PLANAR T RANSISTOR The GI3669 is designed for using in power amplifier applications, power switching applications. TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings (TA=25 : ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Total Device Dissipation (TA=25 : ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ Tstg Ratings 80 80 5 2 1.25 150 -55 ~ +150 Unit V V V A W : : Electrical Characteristics (TA = 25 : unless otherwise noted) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob ton (Turn-On Time) tstg (Storage Time) tf (Fall Time) Min. 80 80 5 70 40 Typ. 0.15 0.9 100 30 0.2 1.0 0.2 Max. 1 1 0.5 1.2 240 Unit V V V uA uA V V IC=100uA, IE=0 IC=10mA, IB=0 IE=100uA, IC=0 VCB=80V, IE=0 VEB=5V, IC=0 IC=1A, IB=50mA IC=1A, IB=50mA VCE=2V, IC=0.5A VCE=2V, IC=1.5A VCE=2V, IE=500mA, f=100MHz VCB=10V, IE=0, f=1MHz VCC=30V, RL=30 , IC=1A, IB1=-IB2=50mA, Duty Cycle 1% *Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions MHz pF us us us Classification Of hFE1 Rank Range O 70 ~ 140 Y 120 ~ 240 GI3669 Page: 1/2 ISSUED DATE :2005/08/31 REVISED DATE :2005/11/28B Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GI3669 Page: 2/2