GI5706

ISSUED DATE :2005/05/06 REVISED DATE : GI5706 Description Features NPN EPITAXIAL PLANAR SILICON TRANSISTOR The GI5706 is designed high current switching applications. *Large current capacitance *Low collector-to-emitter saturation voltage *High-speed switching *High allowable power dissipation Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings (Ta = 25 : Parameter Collector to Base Voltage Collector to Emitter Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current(Pulse) Base Current Junction Temperature Storage Temperature Total Power Dissipation ,unless otherwise specified) Symbol Ratings VCBO 80 VCES 80 VCEO 50 VEBO 6 IC 5 ICP 7.5 IB 1.2 Tj +150 TsTG -55 ~ +150 PD 0.8 PD(TC=25 : ) 15 Unit V V V V A A A : : W W Electrical Characteristics (Rating at Ta=25 : ) Symbol Min. Typ. Max. Unit Test Conditions BVCBO BVCES BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE fT Cob ton (Turn-On Time) tstg (Storage Time) tf (Fall Time) 80 80 50 6 200 - 400 15 35 300 20 1 1 135 240 1.2 560 - V V V V uA uA mV mV V MHz pF ns ns ns IC=10uA, IE=0 IC=100uA, RBE=0 IC=1mA, RBE= IE=10uA, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 lC=1A, IB=50mA lC=2A, IB=100mA lC=2A, IB=100mA VCE=2V, IC=500mA VCE=10V, IC=500mA VCB=10V, f=1MHz See specified test circuit. See specified test circuit. See specified test circuit. GI5706 Page: 1/3 ISSUED DATE :2005/05/06 REVISED DATE : Switching Time Test Circuit Characteristics Curve GI5706 Page: 2/3 ISSUED DATE :2005/05/06 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GI5706 Page: 3/3