GJ3055S

Pb Free Plating Product ISSUED DATE :2006/05/19 REVISED DATE :2006/11/09B GJ3055S N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 25m 18A Description The GJ3055S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Low Gate Charge *Simple Drive Requirement *Fast Switching Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VGS VGS ID @TC=25 : ID @TC=100 : IDM PD @TC=25 : Tj, Tstg Ratings 20 ±8 18 10 30 28 0.22 -55 ~ +150 Unit V V A A A W W/ : : Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 4.5 110 Unit : /W : /W GJ3055S Page: 1/5 ISSUED DATE :2006/05/19 REVISED DATE :2006/11/09B Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. 20 0.5 - Typ. 0.037 7 18.9 2.1 2.4 14.3 11.9 22.1 16.7 614 151 116 Max. 1.2 ±100 1 25 25 30 40 - Unit V V/ : V S nA uA uA Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=6A VGS= ±8V VDS=20V, VGS=0 VDS=16V, VGS=0 VGS=10V, ID=8A Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=150 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance RDS(ON) - m VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A ID=6A VDS=10V VGS=10V VDS=10V ID=1A VGS=4.5V RG=6 RL=10 VGS=0V VDS=8V f=1.0MHz Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss - nC ns pF Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD IS ISM 1 Min. - Typ. - Max. 1.3 18 30 Unit V A A Test Conditions IS=18A, VGS=0V, Tj=25 : VD= VG=0V, VS=1.3V Continuous Source Current(Body Diode) Pulsed Source Current(Body Diode) Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. GJ3055S Page: 2/5 ISSUED DATE :2006/05/19 REVISED DATE :2006/11/09B Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. Transconductance v.s. Drain Current Fig 4. On-Resistance v.s. Junction Temperature Fig 5. Breakdown Voltage v.s. Junction Temperature GJ3055S Fig 6. Body Diode Forward Voltage v.s. Source Current Page: 3/5 ISSUED DATE :2006/05/19 REVISED DATE :2006/11/09B Fig 7. Maximum Safe Operating Area Fig 8. Gate Threshold Voltage v.s. Junction Temperature Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Switching Time Circuit GJ3055S Fig 12. Switching Time Waveform Page: 4/5 ISSUED DATE :2006/05/19 REVISED DATE :2006/11/09B Fig 13. Normalized Thermal Transient Impedance Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GJ3055S Page: 5/5