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GJSD1802

GJSD1802

  • 厂商:

    GTM

  • 封装:

  • 描述:

    GJSD1802 - NPN EPITAXIAL PLANAR SILICON TRANSISTOR - GTM CORPORATION

  • 数据手册
  • 价格&库存
GJSD1802 数据手册
ISSUED DATE :2003/10/22 REVISED DATE :2005/01/13B GJSD1802 Description Features NP N EP ITAXI AL PL ANAR S ILI CO N T RANS ISTO R The GJSD1802 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. *Adoption of FBET, MBIT processes *Large current capacity and wide ASO *Low collector-to-emitter saturation voltage *Fast switching speed Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature C ollector to Base Voltage C ollector to Emitter Voltage Emitter to Base Voltage C ollector Current(DC) C ollector Current(Pulse) C ollector Dissipation (Ta = 25 : , unless otherwise specified) Symbol Tj Tstg VCBO VCEO VEBO IC ICP PD Tc=25 : unless otherwise specified) Max. 1 1 0.5 1.2 560 MHZ ns ns ns pF Unit V V V A A V V Ratings +150 -55 ~ +150 60 50 6 3 6 1 20 Unit : : V V V A A W W Electrical Characteristics (Ta = 25 : Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT ton tstg tf C ob Min. 60 50 6 100 35 Typ. 0.19 0.94 150 70 650 35 25 Test Conditions IC=10uA, IE =0 IC=1mA, RBE= IE=10uA, IC=0 VCB=40V, IE =0 VEB=4V, IC=0 IC=2A, IB=0.1A IC=2A, IB=0.1A VCE=2V, IC=0.1A VCE=2V, IC=3A VCE=10V,IC=50mA See test circuit See test circuit See test circuit VCB=10V, f=1MHz GJSD1802 Page: 1/3 ISSUED DATE :2003/10/22 REVISED DATE :2005/01/13B Classification Of hFE1 Rank Range R 100 ~ 200 S 140 ~ 280 T 200 ~ 400 U 280 ~ 560 Switching Time Test Circuit Characteristics Curve GJSD1802 Page: 2/3 ISSUED DATE :2003/10/22 REVISED DATE :2005/01/13B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GJSD1802 Page: 3/3
GJSD1802 价格&库存

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