Pb Free Plating Product
ISSUED DATE :2006/02/15 REVISED DATE :2006/05/03B
GL2305A
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 80m -3.2A
The GL2305A provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The GL2305A is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Description
Features
*Simple Drive Requirement *Surface Mount Device
Package Dimensions SOT-223
REF. A C D E I H
Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35
REF. B J 1 2 3 4 5
Millimeter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor
Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Symbol Rthj-a
Operating Junction and Storage Temperature Range
Ratings -30 ±12 -3.2 -2.6 -10 2.7 0.02 -55 ~ +150 Value 45
Unit V V A A A W W/ : : Unit : /W
Thermal Data
Parameter 3 Thermal Resistance Junction-ambient Max.
GL2305A
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ISSUED DATE :2006/02/15 REVISED DATE :2006/05/03B
Electrical Characteristics (Tj = 25 : unless otherwise specified)
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Symbol BVDSS
BVDSS / Tj
Min. -30 -0.5 -
Typ. -0.1 9 10 1.8 3.6 7 15 21 15 735 100 80
Max. -1.2 ±100 -1 -25 65 80 150 250 18 1325 -
Unit V V/ : V S nA uA uA
Test Conditions VGS=0, ID=-250uA Reference to 25 : , ID=-1mA VDS=VGS, ID=-250uA VDS=-5V, ID=-3A VGS= ±12V VDS=-30V, VGS=0 VDS=-24V, VGS=0 VGS=-10V, ID=-3.2A
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : )
VGS(th) gfs IGSS IDSS
Static Drain-Source On-Resistance
RDS(ON)
-
m
VGS=-4.5V, ID=-3.0A VGS=-2.5V, ID=-2.0A VGS=-1.8V, ID=-1.0A ID=-3.2A VDS=-24V VGS=-4.5V VDS=-15V ID=-3.2A VGS=-10V RG=3.3 RD=4.6 VGS=0V VDS=-25V f=1.0MHz
Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
-
nC
ns
pF
Source-Drain Diode
Parameter Forward On Voltage
2
Symbol VSD Trr Qrr
Min. -
Typ. 24 19
Max. -1.2 -
Unit V ns nC
Test Conditions IS=-1.2A, VGS=0V IS=-3.2A, VGS=0V dI/dt=100A/ s
Reverse Recovery Time2 Reverse Recovery Charge
Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 120 : /W when mounted on min. copper pad.
GL2305A
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ISSUED DATE :2006/02/15 REVISED DATE :2006/05/03B
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Fig 5. Forward Characteristics of Reverse Diode
GL2305A
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
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ISSUED DATE :2006/02/15 REVISED DATE :2006/05/03B
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
120
/W
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GL2305A
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