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GL9411A

GL9411A

  • 厂商:

    GTM

  • 封装:

  • 描述:

    GL9411A - PNP SILICON PLANAR MEDIUM POWER high gain TRANSISTOR - GTM CORPORATION

  • 数据手册
  • 价格&库存
GL9411A 数据手册
CORPORATION G L 9 4 11 A Description The GL9411A is designed for general purpose switching and amplifier applications. ISSUED DATE :2006/11/20 REVISED DATE : PNP SI L I CO N PL AN AR MEDI UM PO WE R HI G H G AI N T RANSI ST O R Features & Amps continuous current, up to 10Amps pulse current 4 Package Dimensions &Low saturation voltages &High Gain SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 : Parameter Symbol Tj Tstg VCBO VCEO VEBO IC ICM PD Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Ratings +150 -55~+150 -30 -25 -5 -4 -10 2.5 Unit : : V V V A A W *The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches. Electrical Characteristics (Ta = 25 : Symbol Min. -30 -25 -25 -25 -5 270 250 195 115 , unless otherwise stated) Typ. - Max. -100 -100 -100 -80 -170 -240 -260 -350 -1.05 1.0 800 - Unit V V V V V nA nA nA mV mV mV mV mV V V Test Conditions IC=-100uA , IE=0 IC=-100uA IC=-10mA, IB=0 IC=-100uA, VEB=1V IE=-100uA ,IC=0 VCB=-24V, IE=0 VCES=-20V VEB=-4V, IC=0 IC=-100mA, IB=-1mA IC=-500mA, IB=-3mA IC=-1A, IB=-7mA IC=-2A, IB=-30mA IC=-4A, IB=-140mA IC=-4A, IB=-140mA VCE=-2V, IC=-4A VCE=-2V, IC=-10mA VCE=-2V, IC=-0.5A VCE=-2V, IC=-2A VCE=-2V, IC=-5A BVCBO BVCES *BVCEO BVCEV BVEBO ICBO ICES IEBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VCE(sat)4 *VCE(sat)5 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 GL9411A Page: 1/2 CORPORATION *hFE5 fT Cob ton toff 50 135 50 150 270 MHz pF ns ISSUED DATE :2006/11/20 REVISED DATE : VCE=-2V, IC=-10A VCE=-10V, IC=-50mA, f=50MHz VCB=-10V, IE=0, f=1MHz VCC=-10V, IC=-4A, IB1=-IB2=-40mA *Measured under pulse condition. Pulse width=300 s, Duty Cycle 2 % Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GL9411A Page: 2/2
GL9411A 价格&库存

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