GLA44

ISSUED DATE :2001/10/04 REVISED DATE :2004/11/18C G L A4 4 Description NPN TRANSISTOR The GLA44 is designed for application requires for high voltage. Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0C 10 C 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 T YP. C 2.30 REF. 6.30 6.70 6.70 6.30 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature C ollector to Base Voltage C ollector to Emitter Voltage Emitter to Base Voltage C ollector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 500 400 6.0 300 2 V V V mA W Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO VCE(sat)1 VCE(sat)2 VBE(sat) hFE1 hFE2 hFE3 hFE4 C ob at Ta = 25 : Min. 500 400 6 40 50 45 40 Typ. 4 Max. 100 500 100 375 750 750 300 6 pF Unit V V V nA nA nA mV mV mV IC=100uA IC=1mA IE=10uA VCB=400V VCB=400V VEB=4V IC=20mA, IB=2mA IC=50mA, IB=5 mA IC=1 0mA, IB=1mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA VCE=20V, f=1MHz Test Conditions GLA44 1/2 ISSUED DATE :2001/10/04 REVISED DATE :2004/11/18C Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GLA44 2/2