GM1213

ISSUED DATE :2003/05/07 REVISED DATE :2004/12/14B GM1213 Description Package Dimensions PNP EPITAXIAL PLANAR TRANSISTOR The GM1213 is designed for using in power amplifier applications or power switching applications. SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Unit V V V A A mW mW 2 Absolute Maximum Ratings Ta=25 : Parameter Junction Temperature Storage Temperature C ollector to Base Voltage C ollector to Emitter Voltage Emitter to Base Voltage C ollector Current at B ase current C ollector Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IB PC(Note 1) Ratings +150 -55 ~ +150 -50 -50 -5 -2 -0.4 500 1000 Typ. 120 40 0.1 1.0 0.1 M ax. -0.1 -0.1 240 -0.5 -1.2 Unit uA uA V V V MHz Pf s s s Characteristics at Ta = 25 : Symbol ICBO IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT C ob ton tstg tf M in. -50 70 20 - N ote 1:Mounted on ceramic substrate (250mm x0.8t) Test Conditions VCB=- 50V,IE=0 VEB=- 5V,Ic=0 IC=-10mA,IB =0 VCE=- 2V,Ic=-0.5A VCE=- 2V,Ic=-2.0A IC=-1A, IB=- 0.05A IC=-1A, IB=- 0.05A VCE=- 2V, IC=- 0.5A VCB=- 10V,IE=0, f=1MHz Characteristics C ollector cut- off current Emitter cut- off current C ollector - emitter breakdown voltage DC current gain C ollector - emitter saturation voltage B ase- emitter saturation voltage Transition frequency C ollector output capacitance Turn-on time Storage time Switching time Fall time Classification Of hFE1 R ank R ange O 70-140 Y 120-240 GM1213 Page: 1/2 ISSUED DATE :2003/05/07 REVISED DATE :2004/12/14B Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GM1213 Page: 2/2