GM161

Pb Free Plating Product CORPORATION GM161 N-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2004/11/03 REVISED DATE :2005/07/21B BVDSS RDS(ON) ID 20V 50m 5.3A The GM161 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. Description Features & Capable of 2.5V gate drive ! &Lower on-resistance &Reliable and Rugged Applications & Notebook PCs &Cellular and portable phones &On-board power supplies &Li-ion battery Systems Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 q TYP. 0.70 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage C ontinuous Drain Current3 ,VGS@4.5V C ontinuous Drain Current3 ,VGS@4.5V Pulsed Drain Current P ower Dissipation Operating Junction and Storage Temperature Range Linear Derating Factor 1,2 Symbol VDSS VGS Ratings 20 f 12 5.3 4.3 10 2 -55 ~ +150 0.01 Unit V V A A A W W/ ID @Ta=25 : ID @Ta=70 : IDM PD@Ta=25 : Tj, Tstg Thermal Data Parameter 3 Symbol M ax. Ratings 90 Unit /W Thermal Resistance Junction-ambient Rthj-amb 1/4 CORPORATION Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ISSUED DATE :2004/11/03 REVISED DATE :2005/07/21B Unless otherwise specified) Min. 20 0.5 - Symbol BVDSS BVDSS/ Tj VGS(th) Typ. 0.1 13 8.7 1.5 3.6 6 14 18.4 2.8 603 144 111 Max. 1.2 D 100 1 10 50 70 250 - Unit V V/ : V S nA uA uA mŁ Test Conditions VGS=0, ID=250Ua R eference to 25 : , ID=1mA VDS= VGS, ID=250uA VDS=5.0V, ID=5.3A VGS= D 12V VDS=20V, VGS=0 VDS=16V, VGS=0 VGS=4.5V, ID=2.0A VGS=2.5V, ID=2.0A VGS=1.5V, ID=0.5A, Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : ) Static Drain-Source On-Resistance Total Gate Charge 2 gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance R everse Transfer Capacitance nC ID=5.3A VDS=10V VGS=4.5V VDS=15V ID=1A VGS=10V RG=2 Ł RD=15 Ł VGS=0V VDS=15V f=1.0MHz ns pF Source-Drain Diode Forward On Voltage2 R everse Recovery Time R everse Recovery Charge VSD Trr Qrr 16.8 11 1.2 V ns nC IS=1.2A, VGS=0 IS=5.0A,VGS=0 dI/dt=100A/ s N otes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 c opper pad of FR4 board;270 : /w when mounted on Min. copper pad. Characteristics Curve 2/4 CORPORATION ISSUED DATE :2004/11/03 REVISED DATE :2005/07/21B 3/4 CORPORATION ISSUED DATE :2004/11/03 REVISED DATE :2005/07/21B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4