GM2301

Pb Free Plating Product ISSUED DATE :2006/01/20 REVISED DATE : GM2301 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 130m -2.6A The GM2301 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The GM2301 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Description Features *Simple Drive Requirement *Surface Mount Device Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current Continuous Drain Current3 Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Symbol Rthj-a Operating Junction and Storage Temperature Range Ratings -20 ±12 -2.6 -2.1 -10 1.5 0.012 -55 ~ +150 Value 83.3 Unit V V A A A W W/ : : Unit : /W Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. GM2301 Page: 1/4 ISSUED DATE :2006/01/20 REVISED DATE : Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. -20 -0.5 - Typ. -0.1 4.4 5.2 1.36 0.6 5.2 9.7 19 29 295 170 65 Max. ±100 -1 -10 130 190 10 - Unit V V/ : V S nA uA uA m Test Conditions VGS=0, ID=-250uA Reference to 25 : , ID=-1mA VDS=VGS, ID=-250uA VDS=-5V, ID=-2.8A VGS= ±12V VDS=-20V, VGS=0 VDS=-16V, VGS=0 VGS=-5.0V, ID=-2.8A VGS=-2.8V, ID=-2.0A ID=-2.8A VDS=-6V VGS=-5V VDS=-15V ID=-1A VGS=-10V RG=6 RD=15 VGS=0V VDS=-6V f=1.0MHz Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss nC ns pF Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD IS ISM 1 Min. - Typ. - Max. -1.2 -1 -10 Unit V A A Test Conditions IS=-1.6A, VGS=0V, Tj=25 : VD=VG=0V, VS=-1.2V Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t 10sec. GM2301 Page: 2/4 ISSUED DATE :2006/01/20 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode GM2301 Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2006/01/20 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GM2301 Page: 4/4