GM3019

GM3019 Description Package Dimensions 1/1 NPN EPITAXIAL PLANAR TRANSISTOR The GM3019 is designed for general purpose amplifier applications and switching requiring collector currents 1A. REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 q TYP. 0.70 REF. Unit Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature C ollector to Base Voltage C ollector to Emitter Voltage Emitter to Base Voltage C ollector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 140 80 7 1 1 V V V A W Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hfe1 hfe2 hfe3 hfe4 hfe5 C ob fT at Ta = 25 : Min. 140 80 7 50 90 100 50 15 100 12 pF MHz Typ. Max. 50 50 200 1.1 300 Unit V V V nA nA mV V IC=100uA , IE=0 IC=30mA. IB=0 IE=100uA, IC=0 VCB=90V VBE=5V IC=150mA, IB=15mA IC=150mA, IB=15mA VCE=10V, IC=0.1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=10V, IC=1000mA VCB=10V, ,IE=0V,f=1MHz VCE=50V, IC=50mA, f=100MHz Test Conditions Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165