ISSUED DATE :2005/06/28 REVISED DATE :
GM BT5087
Description Package Dimensions
P NP E PITAXI AL P L ANAR T RANS ISTO R
The GMBT5087 is designed for low noise, high gain and general purpose amplifier applications.
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0C 10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD ,unless otherwise noted) Max. Unit -10 -50 -300 -850 800 4.0 MHz pF V V V nA nA mV mV IC=-100uA , IE=0 IC=-1mA, IB=0 IE=-10uA ,IC=0 VCB=-10V, IE=0 VCB=-35V, IE=0 IC=-10mA, IB=-1mA IC=-10mA, IB=-1mA VCE=-5V, IC=-0.1mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-0.5mA, f=100MHz VCB=-5V, f=100kHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Ratings +150 -55~+150 -50 -50 -3 -50 225
Unit
V V V mA mW
Electrical Characteristics(Ta = 25 :
Symbol BVCBO BVCEO BVEBO ICBO1 ICBO2 *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. -50 -50 -3 250 250 250 40 Typ. -
Test Conditions
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ISSUED DATE :2005/06/28 REVISED DATE :
Characteristics Curve
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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