CORPORATION
GN202K
Description
S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 8 0 V, C U R R E N T 0 . 1 A The GN202K is designed for ultra high speed switching.
ISSUED DATE :2006/04/10 REVISED DATE :
Package Dimensions
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10°
Absolute Maximum Ratings at TA = 25 :
Parameter Junction Temperature Storage Temperature P eak Reverse Voltage DC Reverse Voltage Mean Rectifying Current P eak Forward Current P eak Forward Surge Current (1uSec) Total Power Dissipation Symbol Tj Tstg VRM VR IO IFM IFSM PD Ratings +150 -55 ~ +150 80 80 100 300 4 200 Unit : : V V mA mA A mW
Electrical Characteristics (at TA = 25 : unless otherwise noted)
Parameter R everse Voltage Forward Voltage R everse Current C apacitance between terminals R everse Recovery Time Symbol VR VF IR CT Trr Min. 80 Max. 1.2 0.1 3.5 4 Unit V V uA pF nS IR=100uA IF=100mA VR=70V VR=6V, f=1MHz VR=6V, IF=5mA Test Conditions
GN202K
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CORPORATION
Characteristics Curve
ISSUED DATE :2006/04/10 REVISED DATE :
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GN202K
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