GS152B

Pb Free Plating Product ISSUED DATE :2006/02/06 REVISED DATE : GS152B P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 300m -0.7A The GS152B provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The GS152B is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Description Features *Low On-State Resistance:0.3 Ł (max) *Ultra High Speed Switching Applications *Notebook PCs *Cellular and portable phones *On-board power supplies *Li-ion battery System Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Symbol VDS VGS ID @TA=25 : IDM PD @TA=25 : Tj, Tstg Symbol Rthj-a Operating Junction and Storage Temperature Range Ratings -20 ±12 -0.7 -2.8 0.35 0.0028 -55 ~ +150 Value 360 Unit V V A A W W/ : : Unit : /W Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. GS152B Page: 1/4 ISSUED DATE :2006/02/06 REVISED DATE : Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. -20 -0.5 - Typ. -0.1 1.5 3.2 0.7 0.8 9.8 10.8 79.1 41.3 290 60 45 Max. -1.2 ±100 -10 300 500 - Unit V V/ : V S nA uA m Test Conditions VGS=0, ID=-250uA Reference to 25 : , ID=-1mA VDS=VGS, ID=-1mA VDS=-10V, ID=-0.4A VGS= ±12V VDS=-20V, VGS=0 VGS=-4.5V, ID=-0.4A VGS=-2.5V, ID=-0.4A ID=-0.7A VDS=-10V VGS=-4.5V VDS=-10V ID=-0.4A VGS=-4.5V RG=6 VGS=0V VDS=-20V f=1.0MHz Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Static Drain-Source On-Resistance Total Gate Charge 2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 nC ns Pf Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Min. - Typ. - Max. -1.1 Unit V Test Conditions IS=-0.7A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t 10sec. GS152B Page: 2/4 ISSUED DATE :2006/02/06 REVISED DATE : Characteristics Curve Fig 1. Drain Current v.s. Drain-Source Voltage Fig 2. Drain Current v.s. Gate-Source Voltage Fig 3. Drain-Source On-State Resistance v.s. Gate-Source Voltage Fig 4. Drain-Source On-State Resistance v.s. Drain Current Fig 5. Drain-Source On-State Resistance v.s. Ambient Temperature GS152B Fig 6. Gate-Source Cut-off Voltage Variance v.s. Ambient Temperature Page: 3/4 ISSUED DATE :2006/02/06 REVISED DATE : Fig 7. Capacitance v.s. Drain-Source Voltage Fig 8. Gate-Source Voltage v.s. Gate Charge Fig 9. Reverse Drain-Current v.s. Source-Drain Voltage Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GS152B Page: 4/4