GS3018

Pb Free Plating Product ISSUED DATE :2004/11/24 REVISED DATE :2005/12/02C GS3018 Description Features & on-resistance. Low N-CHANNEL MOSFET BVDSS RDS(ON) ID 30V 8 115mA N-channel enhancement-mode MOSFET Package Dimensions &Fast switching speed. &Low voltage drive (2.5V) makes this device ideal for portable equipment. &Easily designed drive circuits. &Easy to parallel. REF. A A1 A2 D E HE Millimeter Min. Max. 0.8 1.10 0 0.10 0.8 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 : ID @TA=100 : IDM PD @TA=25 : Tj, Tstg Symbol Rthj-a Ratings 30 f 20 115 75 800 0.225 0.0018 -40 ~ +150 Ratings 556 Unit V V mA mA mA W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Unit /W GS3018 Page: 1/4 ISSUED DATE :2004/11/24 REVISED DATE :2005/12/02C Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Unless otherwise specified) Min. 30 0.8 20 Typ. 5 7 Max. 2.0 ±1 1 8 13 50 25 5 pF Unit V V mS uA uA Test Conditions VGS=0, ID=250uA VDS=VGS, ID=0.1mA VDS=3V, ID=10mA VGS= ±20V VDS=30V, VGS=0 VGS=4V, ID=10mA VGS=2.5V, ID=1mA VGS=0V VDS=5V f=1.0MHz Symbol BVDSS VGS(th) gfs IGSS IDSS RDS(ON) Ciss Coss Crss Symbol VSD Source-Drain Diode Parameter Forward On Voltage2 Min. Typ. 0.84 Max. 1.5 Unit V Test Conditions IS=100mA, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270 : /W when mounted on Min. copper pad. GS3018 Page: 2/4 ISSUED DATE :2004/11/24 REVISED DATE :2005/12/02C Characteristics Curve GS3018 Page: 3/4 ISSUED DATE :2004/11/24 REVISED DATE :2005/12/02C Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GS3018 Page: 4/4