GSC4420

Pb Free Plating Product ISSUED DATE :2006/10/19 REVISED DATE : GSC4420 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 10.5m 13.7A The GSC4420 uses advanced trench technology to provide excellent on-resistance, shoot-through immunity and body diode characteristics. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a synchronous switch or in PWM applications. *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Description Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Ratings 30 ±12 13.7 9.7 60 2.5 0.02 -55 ~ +150 Unit V V A A A W W/ : : Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient Max. Symbol Rthj-amb Value 50 Unit /W GSC4420 Page: 1/4 ISSUED DATE :2006/10/19 REVISED DATE : Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=55 : ) Symbol BVDSS VGS(th) gfs IGSS IDSS Min. 30 0.6 - Typ. 37 30.5 4.6 8.6 5.5 3.4 49.8 5.9 3656 256 168 Max. 3.0 ±100 1 5 10.5 14 36 4050 - Unit V V S nA uA uA m Test Conditions VGS=0, ID=250uA VDS=VGS, ID=250uA VDS=5V, ID=13.7A VGS= ±12V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=13.7A VGS=4.5V, ID=12.7A ID=13.7A VDS=15V VGS=4.5V VDS=15V VGS=10V RG=3 RL=1.1 VGS=0V VDS=15V f=1.0MHz Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss nC ns pF Source-Drain Diode Parameter Forward On Voltage2 Continuous Source Current (Body Diode) Symbol VSD IS Trr Qrr Min. - Typ. 22.5 12.5 Max. 1.0 5 - Unit V A ns nC Test Conditions IS=1.0A, VGS=0V VD= VG=0V, VS=1.0V IS=13.7A, VGS=0V dI/dt=100A/ s Reverse Recovery Time 2 Reverse Recovery Charge Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 125 : /W when mounted on Min. copper pad. GSC4420 Page: 2/4 ISSUED DATE :2006/10/19 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. On-Resistance v.s. Drain Current and Gate Voltage 10 Fig 4. On-Resistance v.s. Junction Temperature 1 0.1 0.01 0.001 0.0001 0.00001 Fig 5. On-Resistance v.s. Gate-Source Voltage Fig 6. Body Diode Characteristics GSC4420 Page: 3/4 ISSUED DATE :2006/10/19 REVISED DATE : Fig 7. Maximum Safe Operating Area Fig 8. Single Pulse Maximum Power Dissipation v.s. Junction Temperature Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Fig 11. Normalized Maximum Transient Thermal Impedance Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSC4420 Page: 4/4