Pb Free Plating Product
ISSUED DATE :2005/03/02 REVISED DATE :2005/09/30B
GSC4435
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 20m -8A
The GSC4435 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *Lower On-resistance *Fast Switching
Description
Features
Package Dimensions
REF. A B C D E F
Millimeter Min. Max.
5.80 4.80 3.80 0C 0.40 0.19 6.20 5.00 4.00 8C 0.90 0.25
REF. M H L J K G
Millimeter Min. Max.
0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45 C 1.27 TYP.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg
Ratings -30 f 20 -8 -6 -50 2.5 0.02 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-ambient Max. Symbol Rthj-amb Value 50 Unit /W
GSC4435
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ISSUED DATE :2005/03/02 REVISED DATE :2005/09/30B
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min. -30 -1.0 Typ. -0.037 20 47 9.5 8 Max. -3.0 D 100 -1 -5 20 35 30 20 120 80 2800 1400 350 pF ns nC Unit V V/ : V S nA uA uA mŁ Test Conditions VGS=0, ID=-250uA Reference to 25 : , ID=-1mA VDS=VGS, ID=-250uA VDS=-10V, ID=-8A 20V VGS= D VDS=-30V, VGS=0 VDS=-24V, VGS=0 VGS=-10V, ID=-8A VGS=-4.5V, ID=-5A ID=-4.6A VDS=-15V VGS=-10V VDS=-15V ID=-1A VGS=-10V RG=6 Ł RD=15 Ł VGS=0V VDS=-15V f=1.0MHz
Symbol BVDSS
BVDSS / Tj
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : )
VGS(th) gfs IGSS IDSS
Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Source-Drain Diode
Parameter Forward On Voltage
2
Symbol VSD IS ISM
1
Min. -
Typ. -0.75 -
Max. -1.2 -2.1 -50
Unit V A A
Test Conditions IS=-2.1A, VGS=0V, Tj=25 : VD=VG=0V, VS=-1.2V
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)
Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%.
GSC4435
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ISSUED DATE :2005/03/02 REVISED DATE :2005/09/30B
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Fig 5. Maximum Drain Current v.s. Case Temperature
GSC4435
Fig 6. Type Power Dissipation
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ISSUED DATE :2005/03/02 REVISED DATE :2005/09/30B
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristics of Reverse Diode
GSC4435
Fig 12. Gate Threshold Voltage v.s. Junction Temperature
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ISSUED DATE :2005/03/02 REVISED DATE :2005/09/30B
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GSC4435
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