GSD1857

ISSUED DATE :2003/10/22 REVISED DATE :2004/11/29B GSD1857 POWER TRANSISTOR N P N E P I TA X I A L P L A N A R T R A N S I S T O R FEATURES *High breakdown voltage. (BVCEO=120V). *Low collector output capacitance. (Type.20pF at VCB=10V) *High transition frequency. (fT=80MHz) Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 REF. L e1 e b C A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings (Ta = 25 : ) Parameter Ratings Unit Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Collect Current*(Pulse) Junction Temperature Storage Temperature Range Total Power Dissipation VCBO VCEO VEBO IC ICP Tj TsTG PD Typ. 80 20 P 82-180 Max. 1 1 400 390 Unit V V V uA uA mV MHz pF 120 120 5 2 3 +150 -55 ~ +150 1 Test Conditions IC=50uA IC=1mA IE=50uA VCB=100V VBE=4V lC=1A,IB=100mA VCE=5V,IC=0.1A VCE=5V,IE=100mA, f=30MHz VCB=10V, IE=0A,f=1MHz V V V A A W Electrical Characteristics (Ta = 25 : ) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) hFE fT Cob Rank Range Min. 120 120 5 82 - Classification Of hFE1 *Measured using pulse current. Q 120-270 R 180-390 Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSD1857 Page: 1/1