GSD2656

ISSUED DATE :2006/01/18 REVISED DATE : GSD2656 Description Package Dimensions NPN EPITAXIAL T RANSISTOR The GSD2656 is designed for general purpose amplifier applications. REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 30 30 6 1 225 Unit : : V V V A mW Electrical Characteristics (Ta = 25 : Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) *hFE *fT Cob Min. 30 30 6 120 Typ. 400 5 , unless otherwise noted) Max. Unit 100 100 350 500 MHz pF V V V nA nA mV IC=10uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=30V, IE=0 VEB=6V, IC=0 Test Conditions IC=500mA, IB=25mA VCE=2V, IC=100mA VCE=2V, IE=-100mA, f=100MHz VCB=10V, f=1MHz *Pulsed Test Classification Of hFE Rank Range EUC 120 ~ 200 EUD 160 ~ 300 EUE 250 ~ 500 GSD2656 Page: 1/2 ISSUED DATE :2006/01/18 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSD2656 Page: 2/2