GSD965AA

CORPORATION GSD965AA Description Package Dimensions D E S1 ISSUED DATE :2005/02/17 REVISED DATE : NPN EPITAXIAL PLANAR TRANSISTOR The GSD965AA is designed for use as AF output amplifier and flash unit. TO-92 A b1 S E A T IN G PLANE L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings at Ta = 25 C ollector to Base Voltage C ollector to Emitter Voltage Emitter to Base Voltage C ollector Current (Continuous) C ollector Current (Peak PT=10mS) Junction Temperature Storage Temperature Total Power Dissipation at Ta = 25 : BVCBO BVCEO BVEBO IC IC Tj Tstg PD 60 30 7.0 5 8 +150 -55 ~ +150 0.75 W V V V A A Characteristics at Ta = 25 Symbol BVCBO BVCEO BVEBO VCEV ICBO IEBO *VCE(sat) *hFE1 *hFE2 fT C ob Min. 60 30 7 60 230 150 Typ. 150 Max. 100 100 0.5 800 50 MHz pF Unit V V V V nA nA V IC=100uA IC=1mA IE=10uA VEB=0.6V VCB=60V VEB=7V IC=1A, IB=0.1A VCE=2V, IC=0.5A VCE=2V, IC=2A VCE=6V, IE=50mA VCB=20V, f=1MHz * P ulse Test: Pulse Width 380us, Duty Cycle 2% Test Conditions Classification Of hFE1 Rank Range Q 230-380 R 340-600 S 560-800 1/2 CORPORATION Characteristics Curve ISSUED DATE :2005/02/17 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2