GSMBT1815

ISSUED DATE :2004/12/08 REVISED DATE : GSM BT 1815 Description Package Dimensions NP N E PITAXI AL P L ANAR T RANS ISTO R The GSMBT1815 is designed for use in driver stage of AF amplifier and general purpose amplification. REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature C ollector to Base Voltage C ollector to Emitter Voltage Emitter to Base Voltage C ollector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 60 50 5 150 225 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT C ob at Ta = 25 : Min. 60 50 5 120 25 80 Typ. Max. 100 100 250 1 700 3.5 MHz pF Unit V V V nA nA mV V IC=100uA IC=1mA IE=10uA VCB=60V VEB=5V IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=2mA VCE=6V, IC=150mA VCE=10V, IC=1mA, f=100MHz VCB=10V, f=1MHz * P ulse Test: Pulse Width 380us, Duty Cycle 2% Test Conditions Classification Of hFE1 Rank Range C4Y 120 - 240 C4G 200 - 400 C4B 350 - 700 1/2 ISSUED DATE :2004/12/08 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2