GSMBZ5256B

ISSUED DATE :2004/11/15 REVISED DATE : GSMBZ5221B~GSMBZ5270B Description ZENER DIODES Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board Ta=25 ‘ , Derate above 25 ‘ Total Device Dissipation Alumina Substrate**TA=25 ‘ , Derate above 25 ‘ Thermal Resistance Junction to Ambient Junction and Storage Temperature *FR-5 - 1.0 0.75 0.062 in. **Alumina-0.4 0.3 Symbol PD PD R JA Tj,Tstg 0.024 in. 99.5% alumina. Max 225 1.8 300 2.4 417 -55 to +150 Unit mW mW/ ‘ mW mW/ ‘ ‘ /W ‘ Thermal Characteristics (VF=0.9V Max @ IF=10mA for all types.) Device GSMBZ5221B GSMBZ5222B GSMBZ5223B GSMBZ5224B GSMBZ5225B GSMBZ5226B GSMBZ5227B GSMBZ5228B GSMBZ5229B GSMBZ5230B GSMBZ5231B GSMBZ5232B GSMBZ5233B GSMBZ5234B GSMBZ5235B GSMBZ5236B GSMBZ5237B GSMBZ5238B GSMBZ5239B GSMBZ5240B Marking Code 18A 18B 18C 18D 18E 8A 8B 8C 8D 8E 8F 8G 8H 8J 8K 8L 8M 8N 8P 8Q Test Current IZT(mA) 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 Min 2.280 2.375 2.565 2.660 2.850 3.135 3.420 3.705 4.085 4.465 4.845 5.320 5.700 5.890 6.460 7.125 7.790 8.265 8.645 9.500 Zener Voltage Vz(V) Nominal M ax 2.4 2.520 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 2.625 2.835 2.940 3.150 3.465 3.780 4.095 4.515 4.935 5.355 5.880 6.300 6.510 7.140 7.875 8.610 9.135 9.555 10.500 ZZK IZ=0.25mA Æ Max 1200 1250 1300 1400 1600 1600 1700 1900 2000 1900 1600 1600 1600 1000 750 500 500 600 600 600 ZZT IZ=IZT Æ Max 30 30 30 30 29 28 24 23 22 19 17 17 7.0 7.0 5.0 6.0 8.0 8.0 10 17 Max. Reverse Current IR(uA) @VR(V) 100 1.0 100 75 75 50 25 15 10 5.0 5.0 5.0 5.0 5.0 5.0 3.0 3.0 3.0 3.0 3.0 3.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 3.0 3.5 4.0 5.0 6.0 6.5 6.5 7.0 8.0 1/9 ISSUED DATE :2004/11/15 REVISED DATE : Device GSMBZ5241B GSMBZ5242B GSMBZ5243B GSMBZ5244B GSMBZ5245B GSMBZ5246B GSMBZ5247B GSMBZ5248B GSMBZ5249B GSMBZ5250B GSMBZ5251B GSMBZ5252B GSMBZ5253B GSMBZ5254B GSMBZ5255B GSMBZ5256B GSMBZ5257B GSMBZ5258B GSMBZ5259B GSMBZ5260B GSMBZ5261B GSMBZ5262B GSMBZ5263B GSMBZ5264B GSMBZ5265B GSMBZ5266B GSMBZ5267B GSMBZ5268B GSMBZ5269B GSMBZ5270B Marking Code 8R 8S 8T 8U 8V 8W 8X 8Y 8Z 81A 81B 81C 81D 81E 81F 81G 81H 81J 81K 81L 81M 81N 81P 81Q 81R 81S 81T 81U 81V 81W Test Current IZT(mA) 20 20 9.5 9.0 8.5 7.8 7.4 7.0 6.6 6.2 5.6 5.2 5.0 4.6 4.5 4.2 3.8 3.4 3.2 3.0 2.7 2.5 2.2 2.1 2.0 1.8 1.7 1.5 1.4 1.4 Min 10.450 11.400 12.350 13.300 14.250 15.200 16.150 17.100 18.050 19.000 20.900 22.800 23.750 25.650 26.600 28.500 31.350 34.200 37.050 40.850 44.650 48.450 53.200 57.000 58.900 64.600 71.250 77.900 82.650 86.450 Zener Voltage Vz(V) Nominal M ax 11 11.550 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56 60 62 68 75 82 87 91 12.600 13.650 14.700 15.750 16.800 17.850 18.900 19.950 21.000 23.100 25.200 26.250 28.350 29.400 31.500 34.650 37.800 40.950 45.150 49.350 53.550 58.800 63.000 65.100 71.400 78.750 86.100 91.350 95.550 ZZK IZ=0.25mA Æ Max 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 700 700 800 900 1000 1100 1300 1400 1400 1600 1700 2000 2200 2300 ZZT IZ=IZT Æ Max 22 30 13 15 16 17 19 21 23 25 29 33 35 41 44 49 58 70 80 93 105 125 150 170 185 230 270 330 370 400 Max. Reverse Current IR(uA) @VR(V) 2.0 8.4 1.0 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 9.1 9.9 10 11 12 13 14 14 15 17 18 19 21 21 23 25 27 30 33 36 39 43 46 47 52 56 62 68 69 2/9 ISSUED DATE :2004/11/15 REVISED DATE : Characteristics Curve 3/9 ISSUED DATE :2004/11/15 REVISED DATE : 4/9 ISSUED DATE :2004/11/15 REVISED DATE : 5/9 ISSUED DATE :2004/11/15 REVISED DATE : 6/9 ISSUED DATE :2004/11/15 REVISED DATE : 7/9 ISSUED DATE :2004/11/15 REVISED DATE : 8/9 ISSUED DATE :2004/11/15 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 9/9