GSS2030

Pb Free Plating Product ISSUED DATE :2006/04/24 REVISED DATE : GSS2030 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET The GSS2030 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *Low On-resistance *Fast Switching Description N-CH BVDSS 20V N-CH RDS(ON) 30m N-CH ID 6A P-CH BVDSS -20V N-CH RDS(ON) 50m N-CH ID -5A Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Ratings N-channel P-channel Unit V V A A A W W/ : : 20 ±8 6 4.8 20 2.0 0.016 -20 ±8 -5 -4 -20 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range -55 ~ +150 Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Value 62.5 Unit : /W GSS2030 Page: 1/7 ISSUED DATE :2006/04/24 REVISED DATE : N-Channel Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. 20 0.5 - Typ. 0.037 18.5 - Max. 1.2 ±100 1 25 30 45 Unit V V/ : V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=6A VGS= ±8V VDS=20V, VGS=0 VDS=16V, VGS=0 VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A ID=6A VDS=10V VGS=4.5V VDS=10V ID=1A VGS=4.5 RG=6 RD=10 VGS=0V VDS=8V f=1.0MHz Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance2 Total Gate Charge 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss - 9 1.8 4.2 29 65 60 50 300 255 115 pF ns nC Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Parameter Forward On Voltage2 Continuous Source Current (Body Diode) Symbol VSD IS Min. - Typ. - Max. 1.2 1.67 Unit V A Test Conditions IS=1.7A, VGS=0V, Tj=25 : VD=VG=0V, VS=1.2V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 135 : /W when mounted on Min. copper pad. GSS2030 Page: 2/7 ISSUED DATE :2006/04/24 REVISED DATE : P-Channel Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. -20 -0.5 - Typ. -0.037 2.5 - Max. -1.0 ±100 -1 -25 50 80 Unit V V/ : V S nA uA uA m Test Conditions VGS=0, ID=-250uA Reference to 25 : , ID=-1mA VDS=VGS, ID=-250uA VDS=-10V, ID=-2.2A VGS= ±8V VDS=-20V, VGS=0 VDS=-16V, VGS=0 VGS=-4.5V, ID=-2.2A VGS=-2.5V, ID=-1.8A ID=-2.2A VDS=-16V VGS=-4.5V VDS=-10V ID=-2.2A VGS=-4.5V RG=6 RD=4.5 VGS=0V VDS=-15V f=1.0MHz Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance2 Total Gate Charge 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss - 11.5 3.2 1.5 10 25 50 30 940 440 130 pF ns nC Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Parameter Forward On Voltage2 Continuous Source Current (Body Diode) Symbol VSD IS Min. - Typ. - Max. -1.2 -1.67 Unit V A Test Conditions IS=-1.8A, VGS=0V, Tj=25 : VD=VG=0V, VS=-1.2V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 135 : /W when mounted on Min. copper pad. GSS2030 Page: 3/7 ISSUED DATE :2006/04/24 REVISED DATE : Characteristics Curve N-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode GSS2030 Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 4/7 ISSUED DATE :2006/04/24 REVISED DATE : N-Channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform GSS2030 Fig 12. Gate Charge Waveform Page: 5/7 ISSUED DATE :2006/04/24 REVISED DATE : P-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode GSS2030 Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 6/7 ISSUED DATE :2006/04/24 REVISED DATE : P-Channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSS2030 Page: 7/7