GSS4913

Pb Free Plating Product ISSUED DATE :2006/08/31 REVISED DATE : GSS4913 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 130m -3.5A The GSS4913 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Description *Simple Drive Requirement *Low On-resistance *Fast Switching Speed Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Symbol Rthj-a Ratings -20 ±8 -3.5 -2.8 -18 2 0.02 -55 ~ +150 Value 62.5 Unit V V A A A W W/ : : Unit : /W Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. GSS4913 Page: 1/4 ISSUED DATE :2006/08/31 REVISED DATE : Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. -20 -0.4 - Typ. -0.028 6.5 6 0.8 1.3 6.5 20 31 21 405 170 45 Max. -1.0 ±100 -1 -25 130 180 8.5 - Unit V V/ : V S nA uA uA m Test Conditions VGS=0, ID=-250uA Reference to 25 : , ID=-250uA Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : ) VGS(th) gfs IGSS IDSS VDS=VGS, ID=-250uA VDS=-5V, ID=-3.5A VGS= ±8V VDS=-16V, VGS=0 VDS=-12V, VGS=0 VGS=-4.5V, ID=-3.5A VGS=-2.5V, ID=-3.0A ID=-3.5A VDS=-5V VGS=-4.5V VDD=-5V ID=-1A VGS=-4.5V RG=6 VGS=0V VDS=-10V f=1.0MHz Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Symbol VSD IS nC ns pF Source-Drain Diode Parameter Forward On Voltage2 Continuous Source Current (Body Diode) Min. - Typ. - Max. -1.2 -2.1 Unit V A Test Conditions IS=-2.1A, VGS=0V VD=VG=0V, VS=-1.2V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. GSS4913 Page: 2/4 ISSUED DATE :2006/08/31 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. On-Resistance v.s. Drain Current and Gate Voltage Fig 4. On-Resistance v.s. Junction Temperature Fig 5. On-Resistance v.s. Gate-Source Voltage Fig 6. Body Diode Characteristics GSS4913 Page: 3/4 ISSUED DATE :2006/08/31 REVISED DATE : Fig 7. Maximum Safe Operating Area Fig 8. Single Pulse Maximum Power Dissipation v.s. Junction Temperature Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 0.0001 0.001 0.01 0.1 1 10 100 300 Fig 11. Transient Thermal Response Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSS4913 Page: 4/4