GSS4953BDY

Pb Free Plating Product ISSUED DATE :2006/07/14 REVISED DATE : GSS4953BDY P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 42m -5A The GSS4953BDY provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *Lower On-resistance *Fast Switching Description Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 2 1 1 1 Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Ratings -30 ±20 -5 -4 -20 2 0.02 -55 ~ +150 Unit V V A A A W W/ : : Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 1 Symbol Max. Rthj-amb Value 62.5 Unit : /W GSS4953BDY Page: 1/5 ISSUED DATE :2006/07/14 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance2 Gate-Source Leakage Current Drain-Source Leakage Current Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 unless otherwise specified) Min. -30 -1.0 Typ. 5 11.7 2.1 2.9 9 10 37 23 582 125 86 Max. -2.5 ±100 -1 42 70 pF ns nC Unit V V S nA uA m Test Conditions VGS=0, ID=-250uA VDS=VGS, ID=-250uA VDS=-5V, ID=-5A VGS= ±20V VDS=-24V, VGS=0 VGS=-10V, ID=-5A VGS=-4.5V, ID=-4A ID=-5A VDS=-15V VGS=-10V VDS=-15V ID=-1A VGS=-10V RG=6 RD=15 VGS=0V VDS=-15V f=1.0MHz Symbol BVDSS VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Min. - Typ. -0.84 Max. -1.2 Unit V Test Conditions IS=-1.7A, VGS=0V Notes: 1. Surface Mounted on FR4 Board, t 10sec. 2. Pulse width 300us, duty cycle 2%. GSS4953BDY Page: 2/5 ISSUED DATE :2006/07/14 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics V GS = - 10 V I D = - 5.0 A Fig 3. Transconductance v.s. Drain Current Fig 4. On-Resistance v.s. Junction Temperature Fig 5. Breakdown Voltage v.s. Junction Temperature GSS4953BDY Fig 6. Body Diode Forward Voltage v.s. Source Current Page: 3/5 ISSUED DATE :2006/07/14 REVISED DATE : Fig 7. Maximum Safe Operating Area Fig 8. Gate Threshold Voltage v.s. Junction Temperature V DS = - 15 V I D = - 5.0 A Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Switching Time Circuit GSS4953BDY Fig 12. Switching Time Waveform Page: 4/5 ISSUED DATE :2006/07/14 REVISED DATE : Fig 13. Normalized Thermal Transient Impedance Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSS4953BDY Page: 5/5