GTS9926E

ISSUED DATE :2005/01/07 REVISED DATE :2006/12/25B GTS9926E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 28m 4.6A The GTS9926E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low on-resistance *Capable of 2.5V gate drive *Low drive current *Surface mount package Description Features Package Dimensions REF. A A1 b c D Millimeter Min. Max. 0.05 0.19 0.09 2.90 1.20 0.15 0.30 0.20 3.10 REF. E E1 e L S Millimeter Min. Max. 6.20 4.30 0.45 0° 6.60 4.50 0.75 8° 0.65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @Ta=25 : Tj, Tstg Ratings 20 ±12 4.6 3.7 20 1 0.008 -55 ~ +150 Unit V V A A A W W/ : : Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient Max. Symbol Rthj-a Value 125 Unit : /W GTC9926E Page: 1/4 ISSUED DATE :2005/01/07 REVISED DATE :2006/12/25B Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 20 0.5 Typ. 0.1 9.7 12.5 1 6.5 820 934 860 510 231 164 137 Max. ±10 1 25 28 40 pF ns nC Unit V V/ : V S uA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=4.6A VGS= ±10V VDS=20V, VGS=0 VDS=20V, VGS=0 VGS=4.5V, ID=4A VGS=2.5V, ID=2A ID=4.6A VDS=20V VGS=5V VDS=10V ID=1A VGS=4.5V RG=6 RD=10 VGS=0V VDS=10V f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance Total Gate Charge 2 RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Parameter Forward On Voltage2 Continuous Source Current(Body Diode) Continuous Source Current(Body Diode) 1 Symbol VSD IS ISM Min. - Typ. - Max. 1.2 1.25 20 Unit V A A Test Conditions IS=1.25, VGS=0V, Tj=25 : VD= VG=0V, VS=1.2V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t 10sec. GTC9926E Page: 2/4 ISSUED DATE :2005/01/07 REVISED DATE :2006/12/25B Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature GTC9926E Fig 6. Type Power Dissipation Page: 3/4 ISSUED DATE :2005/01/07 REVISED DATE :2006/12/25B Fig 7. Gate Charge Characteristics Fig 8. Effective Transient Thermal Impedance Fig 9. Maximum Safe Operating Area Fig 10. Gate Threshold Voltage v.s. Junction Temperature Fig 11. Forward Characteristics of Reverse Diode Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GTC9926E Page: 4/4