GTT8205S

Pb Free Plating Product ISSUED DATE :2006/07/19 REVISED DATE :2006/11/09B GTT8205S N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 28m 6A The GTT8205S provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The TSSOP-6 package is universally used for all commercial-industrial surface mount applications. * Low on-resistance *Capable of 2.5V gate drive *Low drive current Description Features Package Dimensions REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@4.5V Continuous Drain Current , VGS@4.5V Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Ratings 20 ±8 6 4.8 20 1.14 0.01 -55 ~ +150 Unit V V A A A W W/ : : Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Value 110 Unit : /W GTT8205S Page: 1/4 ISSUED DATE :2006/07/19 REVISED DATE :2006/11/09B Electrical Characteristics (Tj = 25 : unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Symbol BVDSS BVDSS / Tj Min. 20 0.5 - Typ. 0.03 20 23 4.5 7 30 70 40 65 1035 320 150 Max. 1.5 ±100 1 25 28 38 - Unit V V/ : V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=6A VGS= ±8V VDS=20V, VGS=0 VDS=16V, VGS=0 VGS=4.5V, ID=6.0A VGS=2.5V, ID=5.2A ID=6A VDS=20V VGS=5V VDS=10V ID=1A VGS=5V RG=6 RD=10 VGS=0V VDS=20V f=1.0MHz Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss nC ns pF Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Min. - Typ. - Max. 1.2 Unit V Test Conditions IS=1.7A, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board, t 5sec; 180 : /W when mounted on Min. copper pad. GTT8205S Page: 2/4 ISSUED DATE :2006/07/19 REVISED DATE :2006/11/09B Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. RDSON v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode GTT8205S Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2006/07/19 REVISED DATE :2006/11/09B Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 180 /W Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GTT8205S Page: 4/4