GS1K-E

GS1K-E

  • 厂商:

    GULFSEMI

  • 封装:

  • 描述:

    GS1K-E - SURFACE MOUNT GLASS PASSIVATED RECTIFIER VOLTAGE:600V to 1000V CURRENT: 1.0A - Gulf Semicon...

  • 详情介绍
  • 数据手册
  • 价格&库存
GS1K-E 数据手册
GS1J-E THRU GS1M-E SURFACE MOUNT GLASS PASSIVATED RECTIFIER VOLTAGE:600V to 1000V CURRENT: 1.0A FEATURE Ideal for surface mount pick and place application Low profile package Built-in strain relief High surge capability High temperature soldering guaranteed 260℃/10sec/at terminals Halogen Free SMA/DO-214AC MECHANICAL DATA Terminal:Plated axial leads solderable per MIL-STD 202E, method 208C Case : Molded with UL-94 class V-0 recognized Halogen Free Epoxy Polarity:color band denotes cathode Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half-wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated, for capacitive load, derate current by 20%) SYMBOL Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC blocking Voltage Maximum Average Forward Rectified Current 3/8″lead length Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load Maximum Instantaneous Forward Voltage at rated Forward current Maximum DC Reverse Current Ta =25℃ at rated DC blocking voltage Ta =125℃ Typical Junction Capacitance (Note 1) Typical Thermal Resistance (Note 2) (Note 3) Storage and Operating Junction Temperature Note: 1. Measured at 1.0 MHz and applied voltage of 4.0Vdc 2. Thermal Resistance from Junction to terminal mounted on 5×5mm copper pad area 3. Junction to Case GS1J-E 600 420 600 GS1K-E 800 560 800 1.0 30.0 1.1 5.0 200.0 15.0 30 50 -50 to +150 GS1M-E 1000 700 1000 units V V V A A V µA pF ℃/W ℃ Vrrm Vrms Vdc If(av) Ifsm Vf Ir Cj Rth(jl) Rth(jc) Tj, Tstg Rev.A1 www.gulfsemi.com RATINGS AND CHARACTERISTIC CURVES GS1J-E THRU GS1M-E Rev.A1 www.gulfsemi.com
GS1K-E
1. 物料型号: - GS1J-E、GS1K-E、GS1M-E

2. 器件简介: - 表面贴装玻璃钝化整流器,适用于表面贴装拾放应用,具有低轮廓封装、内置应变消除、高浪涌能力、高温焊接保证(260℃/10秒/端子)、无卤素。

3. 引脚分配: - 端子:按照MIL-STD 202E, 方法208C可焊镀轴向引线。 - 极性:色带表示阴极。

4. 参数特性: - 最大重复峰值反向电压(Vrrm):GS1J-E为600V,GS1K-E为800V,GS1M-E为1000V。 - 最大RMS电压(Vrms):GS1J-E为420V,GS1K-E为560V,GS1M-E为700V。 - 最大直流阻断电压(Vdc):GS1J-E为600V,GS1K-E为800V,GS1M-E为1000V。 - 最大平均正向整流电流(If(av)):GS1K-E为1.0A。 - 正向浪涌电流(Ifsm):GS1K-E为30.0A。 - 最大正向电压在额定正向电流时(Vf):GS1K-E为1.1V。 - 25°C时最大直流反向电流(Ir):GS1K-E为5.0A,125°C时为200.0A。 - 典型结电容(Cj):GS1J-E为15.0pF。 - 典型热阻(Rth(jl)):GS1J-E为30℃/W,Rth(jc)为50℃/W。 - 存储和工作结温(Tj, Tstg):-50至+150℃。

5. 功能详解: - 该器件为整流器,用于将交流电转换为直流电。文档提供了正向电流降额曲线、最大非重复峰值正向浪涌电流、典型瞬态正向特性、典型反向漏电特性、典型结电容和瞬态热阻等特性曲线。

6. 应用信息: - 适用于需要整流功能的电路,如电源、电机控制等。

7. 封装信息: - 封装类型为SMA/DO-214AC,是一种表面贴装封装,具有高温度焊接保证和无卤素特性。
GS1K-E 价格&库存

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