UF1003E

UF1001E THRU UF1007E ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE：50 TO 1000V CURRENT： 1.0A FEATURE Low power loss High surge capability Glass passivated chip junction Ultra-fast recovery time for high efficiency High temperature soldering guaranteed 250℃/10sec/0.375″lead length at 5 lbs tension A405 MECHANICAL DATA Terminal：Plated axial leads solderable per MIL-STD 202E, method 208C Case：Molded with UL-94 Class V-0 recognized Flame Retardant Epoxy Polarity：color band denotes cathode Mounting position：any Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half -wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated) SYMBOL Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC blocking Voltage Maximum Average Forward Rectified Current 3/8″lead length at Ta =55℃ Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load Maximum Forward Voltage at Forward current 1A Peak Maximum DC Reverse Current Ta =25℃ at rated DC blocking voltage Ta =120℃ Maximum Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Storage and Operating Junction Temperature Vrrm Vrms Vdc If(av) Ifsm Vf Ir Trr Cj R(ja) Tstg,Tj UF1 001E 50 35 50 UF1 002E 100 70 100 UF1 003E 200 140 200 UF1 004E 400 280 400 1.0 30.0 UF1 005E 600 420 600 UF1 006E 800 560 800 UF1 007E 1000 700 1000 units V V V A A 1.0 1.3 5.0 100.0 50 20 25.0 -55 to +150 1.7 V μA μA 75 10 nS pF ℃/W ℃ Note： 1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A 2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc 3. Thermal Resistance from Junction to Ambient at 3/8″lead length, P.C. Board Mounted Rev.1 www.gulfsemi.com RATINGS AND CHARACTERISTIC CURVES UF1001E THRU UF1007E 1 1 Rev.1 www.gulfsemi.com