C8000-30

BT-CCD Camera C8000-30 Back-Thinned CCD Camera FEATURES High-sensitivity imaging from UV to nearinfrared wavelengths - UV: Quantum efficiency over 60 % (at 200 nm) - Near-infrared: Quantum efficiency over 90 % (at 650 nm) Quantum efficiency in UV source (reference data) (This is typical, not guaranteed.) Light source Wavelength (nm) F2 157 84 ArF 193 57 KrF 248 69 Fourth harmonic generation of a YAG laser i line 365 47 266 50 Quantum efficiency (%) (typ.) * UV light irradiation may cause a drop in sensitivity and increase the dark current of the CCD sensor. C8000-30 The C8000-30 employs an ultrahigh-sensitivity back-thinned CCD sensor made by Hamamatsu, which offers extremely high quantum efficiency in a wide range of UV, VIS and NIR wavelengths. The high UV sensitivity from 120 nm is useful for semiconductor mask inspection and measurement applications. Also, the high NIR sensitivity is useful for fluorescence measurement, NIR LD measurement and so on. SPECTRAL RESPONSE S PECTRAL 100 Real time background subtraction Recursive filter (2, 4, 8, 16, 32 and 64 frames selectable) PRINCIPLE PRINCIPLE In a normal CCD with front-illuminated CCD structure, the light sensitive pixels have a charge transfer function as well, and this function requires the front surface of light sensitive pixels to be covered by a semi-transparent Poly-Si electrode for the charge transfer function. The Poly-Si electrode absorbs some percentage of incoming photons depending on their wavelength. Especially of of the UV light is not able to reach the light sensitive pixels. To overcome this disadvantage, in a back-thinned CCD, the CCD is turned upside down and this back side of the CCD is thinned to 10-15 μm in thickness. Incident photons now enter the CCD from the back-thinned side, without the Poly-Si electrode in the light path. Then QE values of greater than 90 % can be achieved. Normal CCD Back-Thinned CCD Gate electrodes Quantum efficiency (%) 80 60 40 20 (Front-Illuminated CCD) Light Light sensitive pixels e- Light Light sensitive pixels e-e- 0 200 400 600 800 1000 1200 Gate electrodes Wavelength (nm) * Without sapphire window. With the sapphire window, the spectral response is decreased due to the transmittance characteristics of the window. SYSTEM CONFIGURATION Lens C8000-30 Computer frame grabber board A3472-06 AC ADAPTOR Computer POWER HAMAMATSU A3472-06 Microscope Video camera microscope attachment Standard Options SYSTEM SPECIFICATIONS Type number Imaging device Effective number of pixels Cell size Effective area 11 Frame rate 44 Readout noise (r.m.s.) (typ.) Full well capacity (typ.) Cooling method Cooling temperature A/D converter Exposure time Analog gain Sub-array External trigger mode Image processing functions Lens mount Interface External control Power requirements Power consumption Ambient storage temperature Ambient operating temperature binning 22 OPTIONS C8000-30 Back-thinned frame transfer CCD 640 (H) 14 μm (H) 8.96 mm (H) 480 (V) 14 μm (V) 6.72 mm (V) AC adaptor: A3472-06 Power cable (5 m): A9071-05 31.4 frames/s 58.3 frames/s 101.8 frames/s Approx. 100 electrons 30 000 electrons Passive air-cooled + 5 ˚C (room temperature + 20 ˚C) 12 bit 30.8 ms to 1 s Approx. 1 to 5 times (16 steps) 8 pixels increments (V) Edge trigger, Level trigger, Start trigger, Synchronous readout trigger Background subtraction, Recursive filter C-mount Camera Link Base Configuration Camera Link DC +12 V Approx. 10 V.A - 10 ˚C to + 50 ˚C 0 ˚C to + 40 ˚C 70 % max. (with no condensation) Ambient storage/operating humidity *Calculated from the ratio of the full well capacity and the average readout noise. DIMENSIONAL OUTLINES D IMENSIONAL Camera head (approx. 1.3 kg) 1-32UN C-mount 82±1 (Unit: mm) AC adaptor A3472-06 (approx. 0.8 kg) (option) 2.36±0.5 140±1 BT-CCD CAMERA 3.3±2 A3472-06 ΠΟΩΕΡ 148 AC ADAPTOR 168 C8000 82±1 41±0.5 HAMAMA TSU 8±0.5 67.7±1 18±0.3 4-M3 d=8 1/4-20UNC d=8 ★ Product and software package names noted in this documentation are trademarks or registered trademarks of their respective manufacturers. ● ● Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult your local sales representative. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications and external appearance are subject to change without notice. . © 2010 Hamamatsu Photonics K.K. 32±0.3 HAMAMATSU PHOTONICS K.K., Systems Division 812 Joko-cho, Higashi-ku, Hamamatsu City, 431-3196, Japan, Telephone: (81)53-431-0124, Fax: (81)53-435-1574, E-mail:export@sys.hpk.co.jp Homepage Address http://www.hamamatsu.com U.S.A. and Canada: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1)908-231-0852, E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658, E-mail: info@hamamatsu.de , France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10, E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire, AL7 1BW, U.K., Telephone: (44) 1707-294888, Fax: (44) 1707-325777, E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171-41 Solna, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01, E-mail: info@hamamatsu.se Cat. No. SCAS0009E01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int.6-20020 Arese (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741, E-mail: info@hamamatsu.it 59 JUN/2010 HPK Created in Japan