G10342-14

PHOTODIODE InGaAs PIN photodiode with preamp G10342-14/-54 ROSA type, 1.3/1.55 µm, 10 Gbps Features Applications l Compatible with 10 Gbps Miniature Device (XMD-MSA) l High-speed response: 11.3 Gbps l Low power supply voltage: Vcc=Vpd=3.3 V l Differential output l Sensitivity: +3 to -20.5 dBm l High trans-impedance gain: 6 kΩ l Low optical return loss: 35 dB Typ. l Isolation type: Housing and signal ground are electrically isolated. l Flex board interface (G10342-54) s Absolute maximum ratings Parameter Supply voltage Reverse voltage (photodiode) Storage temperature *1 Symbol Vcc VR Tstg l SDH/SONET (STM-64/OC-192) l 10 Gigabit Ethernet l XFP transceiver Value -0.5, +3.7 7 -40 to +90 Unit V V °C s R ecommended operating conditions Parameter Case temperature * 1 Supply voltage Reverse voltage (photodiode) Spectral response range Load resistance *2 Bit rate Bit pattern *1: No condensation *2: Capacitive coupling Symbol Tc Vcc Vpd λ RL Value -20 to 90 3.05 to 3.53 3.05 to 5.0 1.26 to 1.57 50 9 to 11.1 NRZ, Mark ratio=1/2 Unit °C V V µm Ω Gbps - s E lectrical and optical characteristics (recommended operating conditions, unless otherwise noted) Parameter Responsivity Supply current Cut-off frequency Low cut-off frequency Noise equivalent power *3 Trans-impedance *3 Minimum receivable sensitivity Maximum receivable sensitivity Output amplitude Dark current Symbol R Icc fc fc-L NEP Tz Pmin Pmax Vomax ID Conditions λ =1.31 µm λ =1.55 µm Dark state, R L= ∞ λ =1.55 µm, -3 dB λ =1.55 µm, -3 dB Dark state, to 7.5 GHz R L=50 Ω , f=100 MHz λ =1.55 µm, PRBS=2 31-1, BER=10 -12, Extinction ratio=14 dB Differential Tc=25 °C Dark state, Vpd=3.3 V λ =1.31/1.55 µm Min. 0.75 0.8 7.0 4 +1 300 27 Typ. 0.85 0.9 32 9.0 10 1.0 6 -20.5 +3 450 0.05 35 Max. 45 50 -18.5 650 0.5 100 dBm mVpp nA dB Unit A/W mA GHz kHz µWrms kΩ Optical return loss ORL *3: Single-ended (Vout+) measurement 1 InGaAs PIN photodiode with preamp s Bit error rate 10-3 (Typ. Ta=25 ˚C, Bit rate 11.1 Gbps, PN=31) G10342-14/-54 s Frequency response 5 (Ta=25 ˚C, Vout+, Vcc=Vpd=3.3 V, λ=1.55 µm, Pin= -18 dBm) 0 10 -4 RELATIVE SENSITIVITY (dB) BIT ERROR RATE -5 -10 -15 -20 -25 -30 10 10 -5 -6 10-7 10 -8 10-9 10 -10 10-11 10-12 -26 -25 -24 -23 -22 -21 -20 -19 -18 0 2 4 6 8 10 12 14 16 18 20 AVERAGE OPTICAL INPUT POWER (dBm) KIRDB0377EA FREQUENCY (GHz) KIRDB0378EA s Eye diagram Bit rate 10 Gbps, PN=31, NRZ, λ=1.55 µm, Extinction raito 14 dB, Vcc=Vpd=3.3 V Pin= +2.5 dBm, 100 mV/div., 20 ps/div. Pin= -20 dBm, 50 mV/div., 20 ps/div. s Dimensional outline (unit: mm) G10342-14 6.2-0.1 +0 G10342-54 5.8 ± 0.1 6.2-0.01 +0 5.8 ± 0.1 5.8 ± 0.1 2.92 ± 0.05 0.58 ± 0.05 0.63 ± 0.05 4.05 ± 0.05 5.8 ± 0.1 0.63 ± 0.05 0.3 1.1 ± 0.035 4.8 ± 0.1 (13) 2.1 ± 0.1 6.9-0.35 +0.3 3.9 0.58 ± 0.05 12.05-0.45 2.99 ± 0.01 +0.35 OPTICAL REFERENCE PLANE 2.92 ± 0.05 4.05 ± 0.05 OPTICAL REFERENCE PLANE 2.99 ± 0.01 1.1 ± 0.035 3.9 ± 0.1 4.8 ± 0.1 (2 ×) 2.1 0.9-0.2 +0.25 (6 ×) 0.4 (5 ×) (60˚) 0.35 (3 ×) 0.5 × 0.2 t (5 ×) 0.79 1.15 ( 5.4) 0.3 2.1 ± 0.1 9.20-0.6 Vpd VoutVout+ Vcc GND 5.5 2.5 1.0 5.8 ( 2.54) 4.45 8.35 16.05 PIN No. Vpd VoutVout+ Vcc GND Tolerance unless otherwise noted: ±0.2 +0.5 Tolerance unless otherwise noted: ±0.2 KIRDA0195EB KIRDA0194EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KIRD1106E03 May 2007 DN