InGaAs PIN photodiodes
G11193 series
Small package, surface mount type
Features
Small SMD (surface mount device) package Low noise, low dark current Low price
Applications
Optical power meter Measurement/analytical instruments
General ratings
Parameter Package Active area Window G11193-02R SMD φ0.2 Resin φ0.3 G11193-03R Unit mm -
Absolute maximum ratings
Parameter Reverse voltage Operating temperature Storage temperature * No condensation Symbol VR Max. Topr Tstg G11193-02R 10 -25 to +85* -40 to +100* G11193-03R Unit V °C °C
Electrical and optical characteristics (Ta=25 °C)
Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Cut-off frequency Terminal capacitance Shunt resistance Detectivity Symbol λ λp S ID fc Ct Rsh D* λ=1.3 μm λ=1.55 μm VR=5 V VR=5 V, RL=50 Ω VR=5 V, f=1 MHz VR=10 mV λ=λp Condition Higher than 10% of peak Min. 0.75 0.77 G11193-02R Typ. Max. 0.9 to 1.7 1.55 0.85 1.0 40 1 3 1000 5 × 1012 800 Min. 0.75 0.77 G11193-03R Typ. Max. 0.9 to 1.7 1.55 0.85 1.0 100 0.5 5 700 5 × 1012 1200 Unit μm μm A/W pA GHz pF MΩ cmăHz1/2/W
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1
InGaAs PIN photodiodes
G11193 series
Spectral response
1.2 (Typ. Ta=25 °C)
Photo sensitivity temperature characteristic
(Typ. Ta=25 °C) 2
Temperature coefficient (%/°C)
1.0
1.5
Photo sensitivity (A/W)
0.8
1
0.6
0.5
0.4
0
0.2 0 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
-0.5
-1 0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Wavelength (µm)
KIRDB0445EA
Wavelength (µm)
KIRDB0409EA
Dark current vs. reverse voltage
10 nA (Typ. Ta=25 °C)
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 °C, f=1 MHz) 1 nA
1 nA
Terminal capacitance
100 pF G11193-03R
Dark current
G11193-03R 100 pA
10 pF
10 pA G11193-02R 1 pA
G11193-02R 1 pF
100 fA 0.01
0.1
1
10
100
100 fF 0.01
0.1
1
10
100
Reverse voltage (V)
KIRDB0446EA
Reverse voltage (V)
KIRDB0447EA
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InGaAs PIN photodiodes
G11193 series
Dark current vs. ambient temperature
100 nA (Typ. VR=5 V)
10 nA
Dark current
1 nA G11193-03R
100 pA G11193-02R 10 pA
1 pA
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100
Ambient temperature (°C)
KIRDB0448EA
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InGaAs PIN photodiodes
G11193 series
Dimensional outline (unit: mm)
Active area 5.0 ± 0.2 1.8 1.2 ± 0.2 0.6 ± 0.2
Photosensitive surface 4.0 ± 0.2 1.0 ± 0.1 1.8
(2 ×)R 0.4 ± 0.1 (2 ×) (R 0.2) 0.6 1.5 1.0
Cathode 0.7 3.0 0.7
Anode
Type No. Active area G11193-02R 0.2 G11193-03R 0.3
KIRDA0210EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed in the specification sheets or supplied as samples may have a suffix “(X)” which means tentative specifications or a suffix “(Z)” which means developmental specifications. ©2010 Hamamatsu Photonics K.K.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KIRD1111E01 Sep. 2010 DN
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