G1736

PHOTODIODE GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications l Low dark current l High stability l Red sensitivity extended type l Analytical instruments l Color identification s General ratings / Absolute maximum ratings Type No. G1735 G1736 G1737 G1738 G1740 G3297 Dimensional outline/ Window material * ➀/K ➁/K ➂/K ➃/R ➄/R ➅/L Package TO-18 TO-5 TO-8 Ceramic Ceramic TO-18 Active area size (mm) 1.3 × 1.3 2.7 × 2.7 5.6 × 5.6 1.3 × 1.3 5.6 × 5.6 1.3 × 1.3 Effective active area (mm2) 1.66 7.26 29.3 1.66 29.3 1.66 Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (°C) (°C) 5 -30 to +80 -40 to +85 s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Terminal Temp. Rise time Dark Short circuit capacitance coefficient tr current current Ct of VR=0 V Isc ID VR=0 V ID Type No. Max. x RL=1 kΩ GaP He-Ne 100 l TCID f=10 kHz LED laser λp 560 nm 633 nm Min. Typ. V4=10 mV V4=1 V (nm) (nm) (pF) (µA) (µA) (pA) (pA) (times/°C) (µs) G1735 0.2 0.25 2 20 0.5 250 G1736 0.8 1.1 5 50 1.8 1200 G1737 4 5 10 100 10 4500 0.4 0.22 0.29 1.07 400 to 760 710 G1738 0.2 0.25 2 20 0.5 250 G1740 4 5 10 100 10 4500 G3297 1.5 1.8 2 20 0.5 250 * Window material K: borosilicate glass, L: lens type borosilicate glass, R: resin coating Spectral Peak response sensitivity range wavelength λ λp Photo sensitivity S (A/W) Shunt resistance Rsh VR=10 mV NEP Min. Typ. (GΩ) (GΩ) (W/Hz1/2) 5 25 2.0 × 10-15 2 15 3.2 × 10-15 1 5 4.5 × 10-15 5 25 2.0 × 10-15 1 5 4.5 × 10-15 5 25 2.0 × 10-15 GaAsP photodiode sSpectral response 0.5 (Typ. Ta=25 ˚C) Diffusion type (Typ.) sPhoto sensitivity temperature characteristic +1.5 PHOTO SENSITIVITY (A/W) 0.4 TEMPERATURE COEFFICIENT (%/˚C) +1.0 0.3 +0.5 0.2 0 0.1 0 200 400 600 800 -0.5 200 400 600 800 WAVELENGTH (nm) KGPDB0024EA WAVELENGTH (nm) KGPDB0025EA sRise time vs. load resistance 10 ms (Typ. Ta=25 ˚C, VR=0 V) sDark current vs. reverse voltage 1 nA (Typ. Ta=25 ˚C) 1 ms G1737, G1740 G1737, G1740 G1736 100 pA 100 µs DARK CURRENT RISE TIME G1736 10 pA 10 µs G1735, G1738 G3297 1 µs 1 pA G1735, G1738, G3297 100 ns 2 10 103 104 105 106 100 fA 0.001 0.01 0.1 1 10 LOAD RESISTANCE (Ω) KGPDB0026EA REVERSE VOLTAGE (V) KGPDB0027EA sShunt resistance vs. ambient temperature 10 TΩ (Typ. VR=10 mV) sShort circuit current linearity 100 10 -2 (Typ. Ta=25 ˚C, A light source fully illuminated) 1 TΩ G1735, G1738, G3297 RL=100 Ω OUTPUT CURRENT (A) SHUNT RESISTANCE G1736 100 GΩ 10 10 10 -4 -6 10 GΩ G1737, G1740 -8 1 GΩ 10-10 10-12 10 -14 100 MΩ DEPENDENT ON NEP 10 MΩ -20 0 20 40 60 80 10 -16 10-16 10-14 10-12 10-10 10-8 10-6 10-4 10-2 100 AMBIENT TEMPERATURE (˚C) KGPDB0028EA INCIDENT LIGHT LEVEL (lx) KGPDB0008EA GaAsP photodiode sDimensional outlines (unit: mm) ➀ G1735 WINDOW 3.0 ± 0.2 5.4 ± 0.2 Diffusion type ➁ G1736 9.1 ± 0.2 WINDOW 5.9 ± 0.1 3.55 ± 0.2 PHOTOSENSITIVE SURFACE 0.45 LEAD PHOTOSENSITIVE SURFACE 0.45 LEAD 2.4 2.9 5.08 ± 0.2 Borosilicate glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. 2.54 ± 0.2 CONNECTED TO CASE Borosilicate glass window may extend a maximum of 0.1 mm beyond the upper surface of the cap. 14 CONNECTED TO CASE KGPDA0012EA 20 4.1 ± 0.2 4.7 ± 0.1 8.1 ± 0.1 KGPDA0013EA ➂ G1737 13.9 ± 0.2 ➃ G1738 CATHODE TERMINAL MARK 6.0 ± 0.2 5.0 ± 0.2 WINDOW 10.5 ± 0.1 12.35 ± 0.1 ACTIVE AREA 5.0 ± 0.2 PHOTOSENSITIVE SURFACE 7.5 ± 0.2 MARK ( 1.4) 0.45 LEAD 0.6 3.0 ± 0.2 CONNECTED TO CASE Borosilicate glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. KGPDA0014EA 14 1.5 ± 0.2 PHOTOSENSITIVE SURFACE 0.45 LEAD 1.9 15 KGPDA0002EA GaAsP photodiode Diffusion type ➄ G1740 10.1 ± 0.1 8.9 ± 0.1 ➅ G3297 5.4 ± 0.2 4.65 ± 0.1 2.15 ± 0.3 14 4.5 ± 0.2 ACTIVE AREA PHOTOSENSITIVE SURFACE PHOTOSENSITIVE SURFACE 0.3 0.7 2.0 ± 0.1 0.45 LEAD 10.5 0.5 LEAD 9.2 ± 0.3 7.4 ± 0.2 ANODE TERMINAL MARK 2.4 2.54 ± 0.2 8.0 ± 0.3 CONNECTED TO CASE Coating resin may extend a maximum of 0.1 mm beyond the upper surface of the package. KGPDA0010EA KGPDA0009EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KGPD1003E01 Apr. 2001 DN