G1963

PHOTODIODE GaP photodiode G1961, G1962, G1963 Schottky type Features Applications l Low dark current l High UV sensitivity l Analytical instruments l UV detection s General ratings / Absolute maximum ratings Type No. G1961 G1962 G1963 Dimensional outline/ Window material ➀/Q * ➁/Q ➂/Q Package TO-18 TO-5 TO-8 Active area size (mm) 1.1 × 1.1 2.3 × 2.3 4.6 × 4.6 Effective active area (mm2) 1.0 5.2 21 Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (°C) (°C) 5 -10 to +60 -20 to +70 s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Spectral Peak response sensitivity range wavelength λ λp (nm) (nm) Photo sensitivity S (A/W) Short circuit current Isc  lx Dark current ID Max. Terminal Temp. Rise time Shunt capacitance coefficient tr resistance Ct of VR=0 V Rsh VR=0 V ID VR=10 mV RL=1 kΩ TCID f=10 kHz (µs) 5 10 30 NEP Type No. G1961 G1962 190 to 550 440 G1963 * Window material Q: quartz glass Hg line 400 nm Min. 254 nm (µA) 0.04 0.12 0.03 0.1 0.23 0.75 λp Typ. V4=10 mV (µA) (pA) 0.05 2.5 0.3 5 0.9 10 V4=1 V (pA) (times/°C) 25 50 1.11 100 Min. Typ. (pF) (GΩ) (GΩ) (W/Hz1/2) 400 4 40 5.4 × 10-15 1500 2 20 7.6 × 10-15 5000 1 1 1.1 × 10-14 GaP photodiode sSpectral response 0.2 (Typ. Ta=25 ˚C) +1.5 G1961, G1962, G1963 sPhoto sensitivity temperature characteristic (Typ.) 0.15 TEMPERATURE COEFFICIENT (%/˚C) PHOTO SENSITIVITY (A/W) +1.0 0.1 +0.5 0.05 0 0 190 400 600 800 -0.5 190 400 600 800 WAVELENGTH (nm) KGPDB0014EA WAVELENGTH (nm) KGPDB0017EB sRise time vs. load resistance 10 ms (Typ. Ta=25 ˚C, VR=0 V) sDark current vs. reverse voltage 1 nA (Typ. Ta=25 ˚C) G1963 1 ms 100 pA 100 µs G1961 10 µs DARK CURRENT G1962 RISE TIME G1963 10 pA G1962 1 µs 1 pA G1961 100 ns 2 10 10 3 10 4 10 5 10 6 100 fA 0.001 0.01 0.1 1 10 LOAD RESISTANCE (Ω) KGPDB0015EA REVERSE VOLTAGE (V) KGPDB0016EA GaP photodiode sShunt resistance vs. ambient temperature 10 TΩ (Typ. VR=10 mV) G1961, G1962, G1963 sShort circuit current linearity 100 10-2 (Typ. Ta=25 ˚C, A light source fully illuminated) 1 TΩ RL=100 Ω OUTPUT CURRENT (A) SHUNT RESISTANCE G1961 100 GΩ G1962 10 10 10 10 10 10 -4 -6 10 GΩ G1963 1 GΩ -8 -10 -12 100 MΩ -14 10 MΩ -20 0 +20 +40 +60 +80 DEPENDENT ON NEP 10-16 -16 -14 10 10 10-12 10-10 10-8 10-6 10-4 10-2 100 AMBIENT TEMPERATURE (˚C) KGPDB0018EA INCIDENT LIGHT LEVEL (lx) KGPDB0008EA sDimensional outlines (unit: mm) ➀ G1961 WINDOW 3.0 ± 0.2 5.4 ± 0.2 3.55 ± 0.2 ➁ G1962 9.1 ± 0.2 4.1 ± 0.2 2.9 20 4.7 ± 0.1 WINDOW 5.9 ± 0.1 8.1 ± 0.1 PHOTOSENSITIVE SURFACE 0.45 LEAD PHOTOSENSITIVE SURFACE 0.45 LEAD 2.4 14 5.08 ± 0.2 2.54 ± 0.2 CONNECTED TO CASE CONNECTED TO CASE KGPDA0005EA KGPDA0006EA GaP photodiode ➂ G1963 13.9 ± 0.2 5.0 ± 0.2 G1961, G1962, G1963 WINDOW 10.5 ± 0.1 12.35 ± 0.1 PHOTOSENSITIVE SURFACE 0.45 LEAD 1.9 7.5 ± 0.2 INDEX MARK ( 1.4) CONNECTED TO CASE 15 KGPDA0007EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KGPD1007E01 Apr. 2001 DN