G5645

PHOTODIODE GaAsP photodiode Diffusion type Short-wavelength type photodiode Features Applications l Low dark current l Narrow spectral response range l Analytical instruments l UV detection s General ratings / Absolute maximum ratings Type No. Dimensional outline/ Window material * ➀/K ➁ ➁ ➂/R Package Active area size (mm) TO-18 Plastic Plastic Plastic 0.8 × 0.8 Effective active area (mm2) 0.58 Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (°C) (°C) 5 -30 to +80 -40 to +85 G5645 G5842 G6262 G7189 s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Dark Terminal Photo sensitivity Temp. Short circuit Rise time current coefficient capacitance S current tf ID of Ct (A/W) Isc VR=0 V VR=5 V ID VR=0 V Type No. 1000 lx RL=1 kΩ GaP Max. TCID f=10 kHz LED λp Min. Typ. 560 nm (nm) (nm) (nA) (nA) (pA) (times/°C) (µs) (pF) G5645 470 0.28 0.05 60 90 300 to 580 G5842 0.06 2 260 to 400 370 50 1.07 3 80 G6262 0.2 0.05 45 65 280 to 580 470 G7189 0.25 0.02 45 65 300 to 580 470 * Window material K: borosilicate glass, R: resin coating Spectral Peak response sensitivity range wavelength λ λp Shunt resistance Rsh VR=10 mV NEP Min. Typ. (GΩ) (GΩ) (W/Hz1/2) 2.3 × 10-15 7.6 × 10-15 10 80 2.3 × 10-15 2.3 × 10-15 GaAsP photodiode sSpectral response 0.5 (Typ. Ta=25 ˚C) 0.1 Diffusion type (Typ. Ta=25 ˚C) PHOTO SENSITIVITY (A/W) G5645 0.3 G7189 G6262 0.2 PHOTO SENSITIVITY (A/W) 0.4 0.08 G5842 0.06 0.04 0.1 0.02 0 200 400 600 800 0 200 300 400 500 WAVELENGTH (nm) KGPDB0029EA WAVELENGTH (nm) KGPDB0001EC sPhoto sensitivity temperature characteristic (Typ.) +3.0 sRise time vs. load resistance 10 ms (Typ. Ta=25 ˚C, VR=0 V) TEMPERATURE COEFFICIENT (%/˚C) +2.5 1 ms +2.0 RISE TIME +1.5 +1.0 +0.5 100 µs 10 µs 1 µs 0 -0.5 200 100 ns 2 10 400 600 800 103 104 105 106 WAVELENGTH (nm) KGPDB0030EA LOAD RESISTANCE (Ω) KGPDB0031EA sDark current vs. reverse voltage 100 pA (Typ. Ta=25 ˚C, VR=0 V) sShunt resistance vs. ambient temperature 10 TΩ (Typ. VR=10 mV) 1 TΩ SHUNT RESISTANCE 0.01 0.1 1 10 DARK CURRENT 10 pA 100 GΩ 10 GΩ 1 pA 1 GΩ 100 MΩ 100 fA 0.001 10 MΩ -20 0 20 40 60 80 REVERSE VOLTAGE (V) KGPDB0032EA AMBIENT TEMPERATURE (˚C) KGPDB0033EA GaAsP photodiode sShort circuit current linearity 10 10 0 Diffusion type (Typ. Ta=25 ˚C, A light source fully illuminated) -2 RL=100 Ω OUTPUT CURRENT (A) 10 10 10 10 10 10 10 -4 -6 -8 -10 -12 -14 Refer to NEP value in characteristic table. -16 10 -16 10 -14 10 -12 10 -10 10 -8 10 -6 10 -4 10 -2 10 0 INCIDENT LIGHT LEVEL (lx) KGPDB0008EA sDimensional outlines (unit: mm) ➀ G5645 WINDOW 3.0 ± 0.2 5.4 ± 0.2 3.55 ± 0.2 ➁ G5842, G6262 (3.4) ACTIVE AREA (3 ×) 0.5 4.7 ± 0.1 3.2 (FILTER) 2.54 4.0 2.4 1.25 ± 0.25 4.0 6.5 ± 0.2 1.25 ± 0.25 0.45 LEAD 14 4.0 0.1 -0.1 +0.2 0.65 0.85 PHOTOSENSITIVE SURFACE 2.54 ± 0.2 3.2 (FILTER) N/C CATHODE ANODE 4.0 CONNECTED TO CASE Borosilicate glass window may extend a maximum of 0.1 mm beyond the upper surface of the cap. KGPDA0012EA KGPDA0004EA 0.2 1.5 4.0 GaAsP photodiode Diffusion type ➂ G7189 4.6 ± 0.2 (INCLUDING BURR) 5.6 ± 0.2 (INCLUDING BURR) 5.4 0.7 0.5 2.54 10˚ 4.5 5.75 ± 0.2 5˚ 0.6 1.0 PHOTOSENSITIVE SURFACE 2.0 4.5 ± 0.4 ANODE CATHODE NC CATHODE 3˚ 0.25 7.5 ± 5˚ 3˚ KGPDA0003EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 5.5 Cat. No. KGPD1004E01 Apr. 2001 DN