G5851-11

PHOTODIODE InGaAs PIN photodiode G8421/G8371/G5851 series Long wavelength type Features Applications l Long cut-off wavelength: 1.9 µm l Optical power meter l 3-pin TO-18 package: low price l Gas analyzer l Thermoelectrically cooled TO-18 package: low dark current l NIR (near infrared) photometry l Active area: φ0.3 to φ3 mm I Specifications / Absolute maximum ratings Type No. Dimensional outline/ Package Window material ➀ ➁ ➂ TO-18 TO-5 TO-8 One-stage TE-cooled Two-stage TE-cooled Cooling Active area (mm) f0.3 f0.5 f1 f3 f0.3 f1 f3 f0.3 f1 f3 Absolute maximum ratings Thermistor TE-cooler Reverse Operating Storage power allowable voltage temperature temperature dissipation Topr current Tstg VR (mW) (A) (V) (°C) (°C) -40 to +85 -55 to +125 G8421-03 G8421-05 G8371-01 G8371-03 G5851-103 G5851-11 G5851-13 G5851-203 G5851-21 G5851-23 Non-cooled 1.5 0.2 1.0 2 -40 to +70 -55 to +85 ➃ TO-8 I Electrical and optical characteristics (Typ. unless otherwise noted) Measurement Spectral Peak Photo Condition response sensitivity sensitivity range S wavelength Element l lp l=lp temperature (°C) G8421-03 G8421-05 G8371-01 G8371-03 G5851-103 G5851-11 G5851-13 G5851-203 G5851-21 G5851-23 25 (µm) 0.9 to 1.9 (µm) (A/W) Dark current ID VR=1 V Typ. (nA) 30 50 100 2000 3 10 200 1.5 5 100 Type No. -10 0.9 to 1.87 1.75 1.1 -20 0.9 to 1.85 Cut-off frequency fc VR=1 V RL=50 W -3 dB Max. (MHz) (nA) 300 100 500 80 1000 40 20000 3 30 100 100 40 2000 3 15 100 50 40 1000 3 Terminal Shunt capacitance resistance Ct Rsh VR=1 V V4=10 mV f=1 MHz (pF) 8 20 80 800 8 80 800 8 80 800 (MW) 1.5 1 0.5 0.05 15 5 0.5 35 10 1 D* l=lp NEP l=lp (cm·Hz1/2/W) (W/Hz1/2) 9 × 10-14 1.5 × 10-13 5 × 1011 2 × 10-13 8 × 10-13 3 × 10-14 12 1.5 × 10 6 × 10-14 2 × 10-13 2 × 10-14 12 2.5 × 10 4 × 10-14 1.5 × 10-13 1 InGaAs PIN photodiode I Spectral response (Typ.) 1.4 1.2 G8421/G8371/G5851 series I Photo sensitivity temperature characteristic (Typ.) 2 1.0 0.8 T=25 ˚C TEMPERATURE COEFFICIENT (%/˚C) PHOTO SENSITIVITY (A/W) 1 0.6 T= -10 ˚C 0.4 0.2 0 0.8 0 T= -20 ˚C 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -1 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 WAVELENGTH (µm) KIRDB0221EA WAVELENGTH (µm) KIRDB0208EA I Dark current vs. reverse voltage Non-cooled type 10 µA (Typ. Ta=25 ˚C) 1 µA G5851-23 (T= -20 ˚C) TE-cooled type (Typ.) G5851-13 (T= -10 ˚C) 1 µA G8371-03 100 nA DARK CURRENT DARK CURRENT G8371-01 100 nA G5851-21 (T= -20 ˚C) G5851-11 (T= -10 ˚C) 10 nA 10 nA G8421-05 G8421-03 1 nA G5851-103 (T= -10 ˚C) G5851-203 (T= -20 ˚C) 1 nA 0.01 0.1 1 10 100 pA 0.01 0.1 1 10 REVERSE VOLTAGE (V) KIRDB0232EB REVERSE VOLTAGE (V) KIRDB0223EA I Terminal capacitance vs. reverse voltage 10 nF (Typ. Ta=25 ˚C, f=1 MHz) G8371-03 G5851-13/-23 I Shunt resistance vs. element temperature 10 MΩ (Typ. VR=10 mV) G8421-03 G5851-103/-203 G8421-05 TERMINAL CAPACITANCE 1 MΩ G8371-01 G5851-11/-21 100 pF SHUNT RESISTANCE 1 nF 100 kΩ G8371-01 G5851-11/-21 10 kΩ G8371-03 G5851-13/-23 1 kΩ 10 pF G8421-05 G8421-03 G5851-103/-203 1 pF 0.1 1 10 100 Ω -40 -20 0 20 40 60 80 90 100 REVERSE VOLTAGE (V) KIRDB0233EA ELEMENT TEMPERATURE (˚C) KIRDB0234EA 2 InGaAs PIN photodiode I Thermistor temperature characteristic 10 6 G8421/G8371/G5851 series I Cooling characteristics of TE-cooler 40 (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) (Typ.) ELEMENT TEMPERATURE (˚C) 20 ONE-STAGE TE-COOLED TYPE 0 RESISTANCE (Ω) 105 -20 104 TWO-STAGE -40 TE-COOLED TYPE 10 3 -60 -40 -20 0 20 0 0.4 0.8 1.2 1.6 ELEMENT TEMPERATURE (˚C) KIRDB0116EA CURRENT (A) KIRDB0231EA I Current vs. voltage characteristics of TE-cooler 1.6 1.4 1.2 ONE-STAGE TE-COOLED TYPE (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 TWO-STAGE TE-COOLED TYPE 0 0.5 1.0 1.5 VOLTAGE (V) KIRDB0115EA 3 InGaAs PIN photodiode I Dimensional outlines (unit: mm) ➀ G8421-03/-05, G8371-01 5.4 ± 0.2 G8421/G8371/G5851 series ➁ G8371-03 9.2 ± 0.2 0.15 MAX. 4.7 ± 0.1 2.7 ± 0.2 3.6 ± 0.2 8.1 ± 0.1 2.5 ± 0.2 0.4 MAX. 4.2 ± 0.2 18 MIN. WINDOW 3.0 ± 0.1 WINDOW 5.9 ± 0.1 13 MIN. PHOTOSENSITIVE SURFACE PHOTOSENSITIVE SURFACE 0.45 LEAD 5.1 ± 0.3 0.45 LEAD 2.5 ± 0.2 1.5 MAX. CASE CASE KIRDA0150EA KIRDA0151EA ➂ G5851-103/-11/-13 15.3 ± 0.2 14 ± 0.2 4.4 ± 0.2 6.4 ± 0.2 ➃ G5851-203/-21/-23 15.3 ± 0.2 14 ± 0.2 6.7 ± 0.2 10 ± 0.2 12 MIN. WINDOW 10 ± 0.2 WINDOW 10 ± 0.2 12 MIN. PHOTOSENSITIVE SURFACE 0.45 LEAD 10.2 ± 0.2 5.1 ± 0.2 PHOTOSENSITIVE SURFACE 0.45 LEAD 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 KIRDA0029EB 5.1 ± 0.2 DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR KIRDA0031EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KIRD1046E02 Jan.2003 DN