G5852-103

PHOTODIODE InGaAs PIN photodiode G8422/G8372/G5852 series Long wavelength type (up to 2.1 µm) Features Applications l Cut-off wavelength: 2.1 µm l 3-pin TO-18 package: low price l TE-cooled type TO-8 package: low dark current l Active area: B0.3 to B3 mm s Specifications / Absolute maximum ratings Dim ensional Package outline Active area (mm) φ0.3 φ0.5 φ1 φ3 φ0.3 φ1 φ3 φ0.3 φ1 φ3 l Gas analyzer l Water content analyzer l NIR (Near Infrared) photometry Type No. Cooling Absolute maximum ratings Thermistor TE-cooler Reverse Operating Storage power allowable voltage temperature temperature dissipation Topr current Tstg VR (mW) (A) (V) (°C) (°C) G8422-03 G8422-05 G8372-01 G8372-03 G5852-103 G5852-11 G5852-13 G5852-203 G5852-21 G5852-23 ➀ ➁ ➂ TO-18 TO-5 TO-8 Non-cooled - - -40 to +85 -55 to +125 One-stage TE-cooled Two-stage TE-cooled 1.5 0.2 1.0 2 -40 to +70 -55 to +85 ➃ TO-8 s Electrical and optical characteristics (Typ. unless otherwise noted) M easurem ent Spectral Peak Photo condition response sensitivity sensitivity Element range w avelen gth S Tem perature λ λp λ=λp T (°C) G8422-03 G8422-05 G8372-01 G8372-03 G5852-103 G5852-11 G5852-13 G5852-203 G5852-21 G5852-23 25 (µm) 0.9 to 2.1 (µm) (A/W) Dark current ID VR=1 V Typ. Max. (nA) (nA) 55 550 125 1250 500 5000 5 (µA) 50 (µA) 5.5 55 50 500 500 5000 3 30 25 250 250 2500 Cut-off freq uenc y fc VR=1 V RL=50 Ω (MHz) 100 80 40 3 100 40 3 100 40 3 Terminal Shunt capacitance resistance Ct Rsh VR=1 V V R = 10 m V f=1 MHz (pF) 8 20 80 800 8 80 800 8 80 800 (MΩ) 0.9 0.3 0.1 0.01 9 1 0.1 18 2 0.2 D∗ λ=λp NEP λ=λp Type No. -10 0.9 to 2.07 1.95 1.2 -20 0.9 to 2.05 (cm ·H z 1/2 /W ) (W/Hz1/2) 1.5 × 10-13 2.5 × 10-13 2.5 × 1011 4 × 10-13 1.5 × 10-12 5 × 10-14 11 8 × 10 1 × 10-13 4 × 10-13 3 × 10-14 12 1.2 × 10 8 × 10-14 3 × 10-13 1 InGaAs PIN photodiode s Spectral response (Typ.) 1.4 1.2 T=25 ˚C G8422/G8372/G5852 series s Photo sensitivity temperature characteristic (Typ.) 2 1.0 0.8 TEMPERATURE COEFFICIENT (%/˚C) PHOTO SENSITIVITY (A/W) 1 0.6 0.4 0.2 T= -10 ˚C 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 T= -20 ˚C -1 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 WAVELENGTH (µm) KIRDB0226EA WAVELENGTH (µm) KIRDB0207EA s Dark current vs. reverse voltage Non-cooled type 100 µA (Typ. Ta=25 ˚C) 1 µA TE-cooled type (Typ.) 10 µA G8372-03 100 nA G5852-13 (T= -10 ˚C) G5852-23 (T= -20 ˚C) DARK CURRENT DARK CURRENT 1 µA G8372-01 10 nA G5852-11 (T= -10 ˚C) G5852-21 (T= -20 ˚C) G8422-05 100 nA G8422-03 10 pA 0.01 G5852-103 (T= -10 ˚C) 1 nA G5852-203 (T= -20 ˚C) 0.1 1 10 100 pA 0.01 0.1 1 10 REVERSE VOLTAGE (V) KIRDB0235EA REVERSE VOLTAGE (V) KIRDB0228EA s Terminal capacitance vs. reverse voltage 10 nF (Typ. Ta=25 ˚C, f=1 MHz) G8372-03 G5852-13/-23 s Shunt resistance vs. element temperature 10 MΩ (Typ. VR=10 mV) G8422-03 G5852-103/-203 G8422-05 100 kΩ G8372-01 G5852-11/-21 TERMINAL CAPACITANCE 1 MΩ G8372-01 G5852-11/-21 100 pF SHUNT RESISTANCE 1 nF 10 kΩ G8372-03 G5852-13/-23 1 kΩ 10 pF G8422-05 G8422-03 G5852-103/-203 1 pF 0.01 0.1 1 10 100 Ω -40 -20 0 20 40 60 80 90 100 REVERSE VOLTAGE (V) KIRDB0236EA ELEMENT TEMPERATURE (˚C) KIRDB0237EA 2 InGaAs PIN photodiode s Thermistor temperature characteristic 106 (Typ.) G8422/G8372/G5852 series s Cooling characteristics of TE-cooler 40 (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) ELEMENT TEMPERATURE (˚C) 20 ONE-STAGE TE-COOLED TYPE 0 RESISTANCE (Ω) 105 -20 104 -40 TWO-STAGE TE-COOLED TYPE 10 3 -60 -20 0 20 -40 0 0.4 0.8 1.2 1.6 ELEMENT TEMPERATURE (˚C) KIRDB0116EA CURRENT (A) KIRDB0231EA s Current vs. voltage characteristics of TE-cooler 1.6 1.4 1.2 ONE-STAGE TE-COOLED TYPE (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 TWO-STAGE TE-COOLED TYPE 0 0.5 1.0 1.5 VOLTAGE (V) KIRDB0115EA 3 InGaAs PIN photodiode s Dimensional outline (unit: mm) ➀ G8422-03/-05, G8372-01 5.4 ± 0.2 4.7 ± 0.1 WINDOW 3.0 ± 0.1 G8422/G8372/G5852 series ➁ G8372-03 9.2 ± 0.2 0.15 MAX. 3.6 ± 0.2 2.5 ± 0.2 0.4 MAX. 2.7 ± 0.2 13 MIN. 0.45 LEAD 2.5 ± 0.2 0.45 LEAD 5.1 ± 0.3 1.5 MAX. CASE CASE KIRDA0150EA 18 MIN. PHOTOSENSITIVE SURFACE PHOTOSENSITIVE SURFACE 4.2 ± 0.2 8.1 ± 0.1 WINDOW 5.9 ± 0.1 KIRDA0151EA ➂ G5852-103/-11/-13 15.3 ± 0.2 14 ± 0.2 6.4 ± 0.2 ➃ G5852-203/-21/-23 15.3 ± 0.2 14 ± 0.2 10 ± 0.2 6.7 ± 0.2 10.2 ± 0.2 DETECTOR ELEMENT (ANODE) DETECTOR ELEMENT (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR 12 MIN. DETECTOR ELEMENT (ANODE) DETECTOR ELEMENT (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR 5.1 ± 0.2 KIRDA0029EB KIRDA0031EB WINDOW 10 ± 0.2 WINDOW 10 ± 0.2 4.4 ± 0.2 12 MIN. PHOTOSENSITIVE SURFACE 0.45 LEAD 10.2 ± 0.2 5.1 ± 0.2 PHOTOSENSITIVE SURFACE 0.45 LEAD 5.1 ± 0.2 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 5.1 ± 0.2 4 Cat. No. KIRD1047E02 Sep. 2001 DN