G8370-10

PHOTODIODE InGaAs PIN photodiode G8370-10 Ceramic package with large active area (φ10 mm) Features Applications l Large active area: φ10 mm l High sensitivity: 0.95 A/W Typ. (λ=1.55 µm) l Low dark current l Low PDL: 5 mdB Typ., 10 mdB Max. l Photo response non-uniformity: ±2 % Typ. l LD power monitor l LD aging equipment I General / Absolute maximum ratings Parameter Active area Reverse voltage Operating temperature Storage temperature * No condensation Symbol VR Max. Topr. Tstg. Value f10 1 -25 to +70 * -25 to +70 * Unit mm V °C °C I Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Shunt resistance Terminal capacitance Cut-off frequency Noise equivalent power Detectivity Photo response non-uniformity PDL Symbol l lp S ID Rsh Ct fc NEP D* PRNU - Condition l=1.3 µm l=lp VR=10 mV VR=10 mV VR=0 V, f=1 MHz VR=0 V, RL=50 W l=lp l=lp 80 % of active area VR=0 V, l=1.55 µm Min. 0.8 0.85 5 - Typ. 0.9 to 1.7 1.55 0.85 0.95 0.2 50 20 100 6 × 10-13 1.5 × 1012 ±2 5 Max. 2 10 Unit µm µm A/W A/W µA kW nF kHz W/Hz1/2 cm·Hz1/2/W % mdB PRELIMINARY DATA Jan. 2003 1 InGaAs PIN photodiode I Spectral response 1.2 G8370-10 I Dark current vs. reverse voltage (Typ. Ta=25 ˚C) 10 µA (Typ. Ta=25 ˚C) PHOTO SENSITIVITY (A/W) 1.0 1 µA 0.8 DARK CURRENT 1.0 1.2 1.4 1.6 0.6 100 nA 0.4 10 nA 0.2 0 0.8 1.8 1 nA 0.01 0.1 1 10 WAVELENGTH (µm) KIRDB0284EA REVERSE VOLTAGE (V) KIRDB0285EA I Terminal capacitance vs. reverse voltage 100 (Typ. Ta=25 ˚C) TERMINAL CAPACITANCE (nF) 10 1 0.01 0.1 1 10 REVERSE VOLTAGE (V) KIRDB0286EA I Dimensional outline (unit: mm) 16.5 ± 0.2 12.5 ± 0.2 ACTIVE AREA 10 PHOTOSENSITIVE SURFACE 1.3 ± 0.1 0.3 ± 0.1 2.2 ± 0.1 10.5 0.5 LEAD 15.1 ± 0.3 13.7 ± 0.3 0.1 15.0 ± 0.2 KIRDA0167EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KIRD1058E01 Jan. 2003 DN